VEMD5060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 2 Radiant sensitive area (in mm ): 7.5 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Excellent I linearity ra Suitable for visible and near infrared radiation DESCRIPTION Fast response times VEMD5060X01 is a high speed and high sensitive PIN Angle of half sensitivity: = 65 photodiode with a highly linear photoresponse. It is a low Floor life: 72 h, MSL 4, according to J-STD-020 profile surface mount device (SMD) including the chip with a Material categorization: for definitions of compliance 2 7.5 mm sensitive area detecting visible and near infrared please see www.vishay.com/doc 99912 radiation. APPLICATIONS High speed photo detector Small signal detection Proximity sensors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD5060X01 26 65 350 to 1070 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD5060X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5060X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 240 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile fig. 8 T 260 C sd Thermal resistance junction / ambient According to EIA / JESD51 R 350 K/W thJA ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2 kV HBM Rev. 1.1, 21-Mar-16 Document Number: 84278 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD5060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -0.8 1.0 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I - 0.2 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -80 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -35 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 350 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --2.6- mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -26 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 835 nm TK -0.1 - %/K k e Ik 2 E = 1 mW/cm , = 950 nm, V = 5 V I 20 26 31 A e R ra Reverse light current 2 E = 1 mW/cm , = 890 nm, V = 5 V I -38 - A e R ra Angle of half sensitivity - 65 - deg Wavelength of peak sensitivity - 820 - nm p Range of spectral bandwidth - 350 to 1070 - nm 0.1 Rise time V = 5 V, R = 50 , = 820 nm t -30 - ns R L r Fall time V = 5 V, R = 50 , = 820 nm t -30 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 1000 1.4 V = 10 V 940 nm V = 10 V R R 100 1.2 865 nm 10 835 nm 1 1.0 0.1 0.8 0.01 0.001 0.6 -40 -20 0 20406080 100 -40 -20 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 21-Mar-16 Document Number: 84278 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel