X-On Electronics has gained recognition as a prominent supplier of VEMD6110X01 Photodiodes across the USA, India, Europe, Australia, and various other global locations. VEMD6110X01 Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

VEMD6110X01 Vishay

VEMD6110X01 electronic component of Vishay
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Part No.VEMD6110X01
Manufacturer: Vishay
Category: Photodiodes
Description: Vishay Semiconductors Photodiodes 32volt 215mW 950nM 60Deg
Datasheet: VEMD6110X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0131 ea
Line Total: USD 1.01 
Availability - 2946
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2946
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0131
10 : USD 0.5984
100 : USD 0.4543
500 : USD 0.4026
1000 : USD 0.3696
3000 : USD 0.3366
9000 : USD 0.3333
24000 : USD 0.3278
45000 : USD 0.3256

   
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Pd - Power Dissipation
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We are delighted to provide the VEMD6110X01 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VEMD6110X01 and other electronic components in the Photodiodes category and beyond.

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VEMD6110X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 1206 Dimensions (L x W x H in mm): 4 x 2 x 1.05 2 Radiant sensitive area (in mm ): 0.85 High photo sensitivity High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm emitters Fast response times Angle of half sensitivity: = 60 Floor life: 72 h, MSL 4, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION AEC-Q101 qualified VEMD6110X01 is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) Material categorization: for definitions of compliance 2 including the chip with a 0.85 mm sensitive area and a please see www.vishay.com/doc 99912 daylight blocking filter matched with IR emitters operating at APPLICATIONS wavelength of 830 nm to 950 nm. High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 VEMD6110X01 9.5 60 750 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6110X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 32 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 270 K/W thJA Rev. 1.1, 03-Jul-15 Document Number: 84179 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD6110X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 13 nA R ro V = 0 V, f = 1 MHz, E = 0 C 12 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 3.6 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 356 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK -3.1 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 9A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 6.7 9.5 12.4 A e R ra Angle of half sensitivity 60 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 750 1050 nm 0.5 Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 1000 10 100 1 0.1 10 V = 5 V R V = 10 V 0.01 R = 950 nm 1 0.001 100 20 40 60 80 0.01 0.1 1 10 2 T - Ambient Temperature (C) E - Irradiance (mW/cm ) 94 8427 amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 100 = 950 nm 2 E = 1 mW/cm e V = 5 V 1.2 R = 950 nm 1.0 10 0.8 1 0.6 0 20 40 60 80 100 0.1 1 10 100 T - Ambient Temperature (C) 94 8416 V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.1, 03-Jul-15 Document Number: 84179 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) I - Reverse Light Current (A) ra ra

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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