VEMD6060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 1206 Dimensions (L x W x H in mm): 4 x 2 x 1.05 2 Radiant sensitive area (in mm ): 0.85 High photo sensitivity High radiant sensitivity Excellent I linearity ra Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 70 Floor life: 72 h, MSL 4, according to J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION AEC-Q101 qualified VEMD6060X01 is a high speed and high sensitive PIN Material categorization: for definitions of compliance photodiode with excellent I linearity. It is a small surface ra please see www.vishay.com/doc 99912 2 mount device (SMD) including the chip with a 0.85 mm sensitive area detecting visible and near infrared radiation. APPLICATIONS High speed photo detector Small signal detection Proximity sensors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD6060X01 5 70 380 to 1070 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile fig. 8 T 260 C sd Thermal resistance junction / ambient According to EIA / JESD51 R 270 K/W thJA Rev. 1.0, 14-Jan-16 Document Number: 84296 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD6060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V - 0.85 1.1 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I -0.03 5 nA R ro V = 0 V, f = 1 MHz, E = 0 C -11- pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C -4.8 - pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 360 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --3.1 - mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -5- A e k 2 Temperature coefficient of I E = 1 mW/cm , = 835 nm TK -0.1 - %/K k e Ik 2 E = 1 mW/cm , = 950 nm, V = 5 V I 3.5 5 6.5 A e R ra Reverse light current 2 E = 1 mW/cm , = 890 nm, V = 5 V I -7- A e R ra Angle of half sensitivity - 70 - deg Wavelength of peak sensitivity - 820 - nm p Range of spectral bandwidth - 380 to 1070 - nm 0.1 Rise time V = 10 V, R = 50 , = 830 nm t -60- ns R L r Fall time V = 10 V, R = 50 , = 830 nm t -50- ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 100 V = 5 V, = 950 nm V = 10 V R R 10 10 1 1 0.1 0.1 0.01 0.001 0.01 -40 -20 0 20406080 100 0.01 0.1 1 10 2 T - Ambient Temperature (C) E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 100 2 = 950 nm 10 mW/cm V = 5 V R 2 5.0 mW/cm 940 nm 2 2.0 mW/cm 1.2 10 2 865 nm 1.0 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 1.0 1 835 nm 2 0.1 mW/cm 2 0.05 mW/cm 2 0.02 mW/cm 0.8 0.1 2 0.01 mW/cm 0.6 0.01 -40 -20 0 20406080 100 0.1 1 10 100 T - Ambient Temperature (C) V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.0, 14-Jan-16 Document Number: 84296 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current I - Reverse Dark Current (nA) ra rel ro I - Reverse Light Current (A) I - Reverse Light Current (A) ra ra