VEMD6010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 1206 Dimensions (L x W x H in mm): 4 x 2 x 1.05 2 Radiant sensitive area (in mm ): 0.85 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 Floor life: 72 h, MSL 4, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified DESCRIPTION Material categorization: for definitions of compliance VEMD6010X01 is a high speed and high sensitive PIN please see www.vishay.com/doc 99912 photodiode. It is a small surface mount device (SMD) 2 APPLICATIONS including the chip with a 0.85 mm sensitive area detecting visible and near infrared radiation. High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD6010X01 9.5 60 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6010X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 32 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 270 K/W thJA Rev. 1.2, 03-Jul-15 Document Number: 84175 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD6010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 13 nA R ro V = 0 V, f = 1 MHz, E = 0 C 12 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 3.6 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 356 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK -3.1 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 9A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 6.7 9.5 12.4 A e R ra Angle of half sensitivity 60 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 10 100 1 0.1 10 V = 5 V R V = 10 V R 0.01 = 950 nm 1 0.001 100 20 40 60 80 0.01 0.1 1 10 2 T - Ambient Temperature (C) 94 8427 E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 100 = 950 nm 2 E = 1 mW/cm e V = 5 V 1.2 R = 950 nm 1.0 10 0.8 1 0.6 0 20 40 60 80 100 0.1 1 10 100 T - Ambient Temperature (C) 94 8416 V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.2, 03-Jul-15 Document Number: 84175 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) I - Reverse Light Current (A) ra ra