VEMD2000X01, VEMD2020X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times VEMD2020X01 VEMD2000X01 Angle of half sensitivity: = 15 21568-1 Package matched with IR emitter series VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC VEMD2000X01 and VEMD2020X01 are high speed and Halogen-free according to IEC 61249-2-21 definition high sensitive PIN photodiodes in a miniature surface mount Find out more about Vishays Automotive Grade Product package (SMD) with dome lens and daylight blocking filter. requirements at: www.vishay.com/applications Filter is matched with IR emitters operating at wavelength of APPLICATIONS 830 nm to 950 nm. The photo sensitive area of the chip is 2 0.23 mm . High speed photo detector Infrared remote control Infrared data transmission Photo interrupters Shaft encoders PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 VEMD2000X01 12 15 750 to 1050 VEMD2020X01 12 15 750 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81962 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.1, 23-Jul-09 1 VEMD2000X01, VEMD2020X01 Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 11 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 512 A ra V = 5 V R Angle of half sensitivity 15 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 750 to 1050 nm 0.5 V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V = 5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 20 40 80 100 0 60 T - Ambient Temperature (C) 94 8416 T - Ambient Temperature (C) 94 8427 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81962 2 Rev. 1.1, 23-Jul-09 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra, rel