VEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 2 Radiant sensitive area (in mm ): 7.5 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times DESCRIPTION Angle of half sensitivity: = 65 VEMD5010X01 is a high speed and high sensitive PIN Floor life: 72 h, MSL 4, according to J-STD-020 photodiode. It is a low profile surface mount device (SMD) Material categorization: for definitions of compliance 2 including the chip with a 7.5 mm sensitive area detecting please see www.vishay.com/doc 99912 visible and near infrared radiation. APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD5010X01 48 65 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD5010X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5010X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2 kV HBM Rev. 1.0, 04-Sep-14 Document Number: 84202 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD5010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 20 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK -2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 45 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 40 48 A e R ra Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 04-Sep-14 Document Number: 84202 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro