VEMD5080X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
Package type: surface-mount
Package form: top view
Dimensions (L x W x H in mm): 5 x 4 x 0.9
2
Radiant sensitive area (in mm ): 7.5
AEC-Q101 qualified
Enhanced sensitivity for visible light
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: = 65
Floor life: 72 h, MSL 4, according to J-STD-020
DESCRIPTION
Material categorization: for definitions of compliance
VEMD5080X01 is a high speed and high sensitive PIN
please see www.vishay.com/doc?99912
photodiode with enhanced sensitivity for visible light. It is a
low profile surface-mount device (SMD) including the chip
APPLICATIONS
2
with a 7.5 mm sensitive area detecting visible and near
High speed photo detector
infrared radiation.
PRODUCT SUMMARY
COMPONENT I (A) (deg) (nm)
ra 0.1
VEMD5080X01 45 65 350 to 1100
Note
Test conditions see table Basic Characteristics
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5080X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5080X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V 20 V
R
Power dissipation T 25 C P 215 mW
amb V
Junction temperature T 110 C
j
Operating temperature range T -40 to +110 C
amb
Storage temperature range T -40 to +110 C
stg
Soldering temperature According to reflow solder profile Fig. 8 T 260 C
sd
Thermal resistance junction / ambient R 350 K/W
thJA
ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2 kV
HBM
Rev. 1.1, 19-Jan-17 Document Number: 84386
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5080X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I = 50 mA V -0.9 1.3 V
F F
Breakdown voltage I = 100 A, E = 0 V 20 - - V
R (BR)
Reverse dark current V = 10 V, E = 0 I - 0.2 10 nA
R ro
V = 0 V, f = 1 MHz, E = 0 C -80 - pF
R D
Diode capacitance
V = 3 V, f = 1 MHz, E = 0 C -30 40 pF
R D
2
Open circuit voltage E = 1 mW/cm , = 950 nm V - 320 - mV
e o
2
Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --3.0- mV/K
o e Vo
2
Short circuit current E = 1 mW/cm , = 950 nm I -45 - A
e k
2
Temperature coefficient of I E = 1 mW/cm , = 950 nm TK -0.1 - %/K
k e Ik
2
E = 1 mW/cm , = 950 nm, V = 5 V I 33 45 53 A
e R ra
Reverse light current
2
E = 0.2 mW/cm , = 525 nm, V = 5 V I 3.1 5.0 6.6 A
e R ra
Angle of half sensitivity - 65 - deg
Wavelength of peak sensitivity - 950 - nm
p
Range of spectral bandwidth - 350 to 1100 - nm
0.1
Rise time V = 10 V, R = 1 k, = 830 nm t -70 - ns
R L r
Fall time V = 10 V, R = 1 k, = 830 nm t -70 - ns
R L f
BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable.
1000 1.2
2
E = 1 mW/cm
V = 10 V e
R
= 950 nm
V = 5 V
100 1.1 R
10 1.0
1 0.9
0.1 0.8
020 40 60 80 100 -40 -20 0 20406080 100
T - Ambient Temperature (C) T - Ambient Temperature (C)
amb amb
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 19-Jan-17 Document Number: 84386
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Reverse Dark Current (nA)
ro
I - Relative Reverse Light Current
ra rel