X-On Electronics has gained recognition as a prominent supplier of VEMD2523X01 Photodiodes across the USA, India, Europe, Australia, and various other global locations. VEMD2523X01 Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

VEMD2523X01 Vishay

VEMD2523X01 electronic component of Vishay
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Part No.VEMD2523X01
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes 60V 215mW 35Deg PIN Photodiode
Datasheet: VEMD2523X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.162 ea
Line Total: USD 1.16 
Availability - 3799
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6074
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3501
10 : USD 0.3487
25 : USD 0.3471
100 : USD 0.3457
250 : USD 0.3442
500 : USD 0.3428
1000 : USD 0.3414
3000 : USD 0.3399
6000 : USD 0.3385

4783
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6734
10 : USD 0.5922
30 : USD 0.5507
100 : USD 0.5112
500 : USD 0.4863
1000 : USD 0.4738

15892
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7487
10 : USD 0.5186
100 : USD 0.3784
500 : USD 0.3749
1000 : USD 0.3036
2500 : USD 0.3036
6000 : USD 0.3036
24000 : USD 0.3036
48000 : USD 0.3036

3799
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.162
10 : USD 0.3612
67 : USD 0.2604
185 : USD 0.2464

   
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Reverse Voltage
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Vr - Reverse Voltage
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Pd - Power Dissipation
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We are delighted to provide the VEMD2523X01 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VEMD2523X01 and other electronic components in the Photodiodes category and beyond.

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VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount VEMD2503X01 VEMD2523X01 Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 AEC-Q101 qualified High radiant sensitivity Suitable for visible and neat infrared radiation Fast response times Angle of half sensitivity: = 35 Package matched with IR emitter series VSMB2943X01 DESCRIPTION Floor life: 4 weeks, MSL 2a, acc. J-STD-020 VEMD2503X01 and VEMD2523X01 are high speed and high sensitive PIN photodiodes in a miniature surface mount Lead (Pb)-free reflow soldering package (SMD) with dome lens. The clear epoxy allows light Material categorization: For definitions of compliance detection of a wide wavelength range from 350 nm to please see www.vishay.com/doc 99912 2 1120 nm. The photo sensitive area of the chip is 0.23 mm . APPLICATIONS High speed photo detector Light curtain Detector for optical switch PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD2503X01 10 35 350 to 1120 VEMD2523X01 10 35 350 to 1120 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Rev. 1.0, 05-Apr-13 Document Number: 84163 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 10 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 710 14 A e R ra Angle of half sensitivity 35 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 350 to 1120 nm 0.1 Rise time V = 10 V, R = 1 k , = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k , = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 V = 5 V R 100 10 10 1 V = 10 V R 1 0.1 20 40 60 80 100 0.01 0.1 1 10 2 T - Ambient Temperature (C) 94 8427 E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 V = 5 V 6 1.2 R = 950 nm E = 0 f = 1 MHz 4 1.0 2 0.8 0 0.6 1 20 40 80 100 0.1 10 100 0 60 94 8430 V - Reverse Voltage (V) 94 8416 T - Ambient Temperature (C) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 05-Apr-13 Document Number: 84163 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) C - Diode Capacitance (pF) ra D

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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Vishay / Electro-Films
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VISHAY / LITE-ON
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