VEMD2500X01, VEMD2520X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW VEMD2520X01 VEMD2500X01 Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 15 Package matched with IR emitter series 16758-11 VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in VEMD2500X01 and VEMD2520X01 are high speed and high accordance to WEEE 2002/96/EC sensitive PIN photodiodes in a clear epoxy, miniature Note surface mount package (SMD) with dome lens. The photo ** Please see document Vishay Material Category Policy: 2 www.vishay.com/doc 99902 sensitive area of the chip is 0.23 mm . APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD2500X01 12 15 350 to 1120 VEMD2520X01 12 15 350 to 1120 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Rev. 1.2, 18-Oct-11 Document Number: 83294 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD2500X01, VEMD2520X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 11 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 8.5 12 17 A ra V = 5 V R Angle of half sensitivity 15 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 350 to 1120 nm 0.1 V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V = 5 V 1.2 R = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 20 40 60 80 100 0 T - Ambient Temperature (C) 94 8427 94 8416 T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.2, 18-Oct-11 Document Number: 83294 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra, rel