VEMD10940FX01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: Side view Dimensions (L x W x H in mm): 3 x 2 x 1 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times Angle of half sensitivity: = 75 Package matched with IR emitter VSMB10940X01 DESCRIPTION Floor life: 168 h, MSL 3, according to J-STD-020 VEMD10940FX01 is a high speed and high sensitive PIN Lead (Pb)-free reflow soldering photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matche d Material categorization: for definitions of compliance with IR emitters operating at wavelength of 830 nm to please see www.vishay.com/doc 99912 2 950 nm. The photo sensitive area of the chip is 0.23 mm . APPLICATIONS High speed photo detector Infrared remote control Infrared data transmission Photo interrupters IR touch panels Automotive applications PRODUCT SUMMARY COMPONENT I (A) () (nm) ra 0.5 VEMD10940FX01 3 75 780 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD10940FX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 104 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow solder profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient According to J-STD-051 R 450 K/W thJA Rev. 1.2, 05-Aug-2019 Document Number: 84217 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD10940FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1.56- V F F Breakdown voltage I = 100 A, E = 0 V 32 - - V R (BR) Reverse dark current V = 10 V, E = 0 I - 1 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -3.3 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -1.5 - pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 350 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --2.7- mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -2.8 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK -0.4 - %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 23 4 A e R ra Angle of half sensitivity - 75 - Wavelength of peak sensitivity - 950 - nm p Range of spectral bandwidth - 780 to 1050 - nm 0.5 Rise time V = 10 V, R = 1 k, = 820 nm t - 100 - ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t - 100 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 V = 5 V, R = 950 nm 100 10 10 1 V = 10 V R 1 0.1 100 20 40 60 80 0.01 0.1 1 10 2 T - Ambient Temperature (C) E - Irradiance (mW/cm ) 94 8427 e amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 V = 5 V R 1.2 6 = 950 nm E = 0 f = 1 MHz 1.0 4 0.8 2 0 0.6 0 20 40 60 80 100 0.1 1 10 100 T - Ambient Temperature (C) 94 8430 94 8416 V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.2, 05-Aug-2019 Document Number: 84217 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) C - Diode Capacitance (pF) ra D