TEMD7000X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 2 Radiant sensitive area (in mm ): 0.23 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 21841 Fast response times Angle of half sensitivity: = 60 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Compliant to RoHS directive 2002/95/EC and in TEMD7000X01 is a high speed and high sensitive PIN accordance to WEEE 2002/96/EC photodiode. It is a miniature surface mount device (SMD) 2 including the chip with a 0.23 mm sensitive area detecting Find out more about Vishays Automotive Grade Product visible and near infrared radiation. requirements at: www.vishay.com/applications APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 TEMD7000X01 3 60 350 to 1120 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 270 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81951 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.1, 19-Aug-09 1 TEMD7000X01 Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 3A ra V = 5 V R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 350 to 1120 nm 0.1 V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V = 5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 20 40 80 100 0 60 T - Ambient Temperature (C) 94 8416 T - Ambient Temperature (C) 94 8427 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81951 2 Rev. 1.1, 19-Aug-09 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra, rel