BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES Package type: leaded Package form: TO-5 Dimensions (in mm): 8.13 2 Radiant sensitive area (in mm ): 7.5 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 94 8482 Angle of half sensitivity: = 50 Hermetically sealed package Cathode connected to package Flat glass window DESCRIPTION UV enhanced BPW20RF is a planar Silicon PN photodiode in a Low dark current hermetically sealed short TO-5 case, especially designed for High shunt resistance high precision linear applications. High linearity Due to its extremely high dark resistance, the short circuit Compliant to RoHS Directive 2002/95/EC and in photocurrent is linear over seven decades of illumination accordance with WEEE 2002/96/EC level. On the other hand, there is a strictly logarithmic correlation APPLICATIONS between open circuit voltage and illumination over the same Sensor for light measuring techniques in cameras, range. photometers, color analyzers, exposure meters (e.g. Equipped with a clear, flat glass window, the spectral solariums) and other medical and industrial measuring responsitivity reaches from blue to near infrared. and control applications. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 BPW20RF 60 50 400 to 1100 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW20RF Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 10 V R Power dissipation T 50 C P 300 mW amb V Junction temperature T 125 C j Operating temperature range T - 40 to + 125 C amb Storage temperature range T - 40 to + 125 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 250 K/W thJA Rev. 1.7, 11-Aug-11 Document Number: 81570 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW20RF www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1.0 1.3 V F F Breakdown voltage I = 20 A, E = 0 V 10 V R (BR) Reverse dark current V = 5 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 1.2 nF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 400 pF R D Dark resistance V = 10 mV R 38 G R D Open circuit voltage E = 1 klx V 330 500 mV A o Temperature coefficient of V E = 1 klx TK - 2 mV/K o A Vo Short circuit current E = 1 klx I 20 60 A A k Temperature coefficient of I E = 1 klx TK 0.1 %/K k A Ik E = 1 klx, V = 5 V I 20 60 A A R ra Reverse light current 2 E = 1 mW/cm , = 950 nm, e I 42 A ra V = 5 V R Angle of half sensitivity 50 deg Wavelength of peak sensitivity 920 nm p Range of spectral bandwidth 400 1100 nm 0.1 Rise time V = 0 V, R = 1 k , = 820 nm t 3.4 s R L r Fall time V = 0 V, R = 1 k , = 820 nm t 3.7 s R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 1.3 10 1.2 3 10 V =5V R = 950 nm 1.1 2 10 1.0 V =5V R 1 10 0.9 10 0.8 0 20 40 60 80 100 120 120 20 40 60 80 100 T - Ambient Temperature (C) 94 8469 T - Ambient Temperature (C) 94 8468 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.7, 11-Aug-11 Document Number: 81570 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel