BPW46 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 5 x 3 x 6.4 2 Radiant sensitive area (in mm ): 7.5 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 94 8632 Fast response times Angle of half sensitivity: = 65 Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC BPW46 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive APPLICATIONS to visible and near infrared radiation. High speed photo detector PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ra 0.1 BPW46 50 65 430 to 1100 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW46 Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81524 394 Rev. 1.5, 08-Sep-08BPW46 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo E = 1 klx I 70 A A k Short circuit current 2 E = 1 mW/cm , = 950 nm I 47 A e k 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Vk E = 1 klx, V = 5 V I 75 A A R ra 2 Reverse light current E = 1 mW/cm , = 950 nm, e I 40 50 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R Rise time V = 10 V, R = 1 k , = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k , = 820 nm t 100 ns R L f Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1.4 1000 V = 5 V 1.2 R = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 0 20 40 60 80 100 20 40 60 80 100 T - Ambient Temperature (C) 94 8416 amb 94 8403 T - Ambient Temperature (C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81524 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.5, 08-Sep-08 395 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro