X-On Electronics has gained recognition as a prominent supplier of BPW76B Phototransistors across the USA, India, Europe, Australia, and various other global locations. BPW76B Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

BPW76B Vishay

BPW76B electronic component of Vishay
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Part No.BPW76B
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors NPN Phototransistor 80V 250mW 850nm
Datasheet: BPW76B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.335 ea
Line Total: USD 3.34 
Availability - 788
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
63
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5584
10 : USD 2.2269
25 : USD 2.184
100 : USD 1.9513
250 : USD 1.9318
500 : USD 1.8707

70
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2338
10 : USD 2.8243
30 : USD 2.5808
100 : USD 2.3356
500 : USD 2.2218
1000 : USD 2.1713

788
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.335
10 : USD 2.3575
25 : USD 2.323
100 : USD 1.8745
250 : USD 1.863
500 : USD 1.725
1000 : USD 1.725
2000 : USD 1.7135
5000 : USD 1.6445

63
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 4
Multiples : 1
4 : USD 1.9513
250 : USD 1.9318
500 : USD 1.8707

58
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 4.3745
10 : USD 2.9991
25 : USD 2.8652
100 : USD 2.2347
250 : USD 2.2126
500 : USD 2.0215
1000 : USD 1.8421
2000 : USD 1.8226
5000 : USD 1.8135

   
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RoHS - XON
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Maximum On-State Collector Current
Mounting Style
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Dark Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Length
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Type
Wavelength
Width
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We are delighted to provide the BPW76B from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPW76B and other electronic components in the Phototransistors category and beyond.

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BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 94 8401 Angle of half sensitivity: = 40 Base terminal connected Hermetically sealed package DESCRIPTION Flat glass window BPW76 is a silicon NPN phototransistor with high radiant Lead (Pb)-free component in accordance with sensitivity in hermetically sealed TO-18 package with base RoHS 2002/95/EC and WEEE 2002/96/EC terminal and flat glass window. It is sensitive to visible and near infrared radiation. APPLICATIONS Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW76A 0.4 to 0.8 40 450 to 1080 BPW76B > 0.6 40 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW76A Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 BPW76B Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V 80 V CBO Collector emitter voltage V 70 V CEO Emitter base voltage V 5V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM 25 C P 250 mW Total power dissipation T amb V Junction temperature T 125 C j Operating temperature range T - 40 to + 125 C amb Storage temperature range T - 40 to + 125 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 400 K/W thJA Thermal resistance junction/ case R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81526 398 Rev. 1.4, 08-Sep-08BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 800 600 R thJC 400 200 R thJA 0 0 25 50 75 100 125 150 94 8342 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 6pF CE CEO Angle of half sensitivity 40 deg Wavelength of peak sensitivity 850 nm p 450 to Range of spectral bandwidth nm 0.1 1080 2 Collector emitter saturation voltage E = 1 mW/cm , = 950 nm, I = 0.1 mA V 0.15 0.3 V e C CEsat Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Note T = 25 C, unless otherwise specified amb TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 2 BPW76A I 0.4 0.8 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW76B I 0.6 mA ca BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 6 10 2.50 2.25 V = 5V CE 2 5 10 E = 1 mW/cm 2.00 e = 950 nm 1.75 4 10 1.50 1.25 3 10 1.00 2 10 0.75 V = 20 V CE 0.50 E=0 1 10 0.25 0 0 10 20 50 100 150 0 1020 3040 5060 70 80 90 100 T - Ambient Temperature (C) 94 8344 94 8343 amb T - Ambient Temperature (C) amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81526 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.4, 08-Sep-08 399 I - Collector Dark Current (nA) P - Total Power Dissipation (mW) CEO tot I - Relative Collector Current ca rel

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8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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