X-On Electronics has gained recognition as a prominent supplier of BPW85B Phototransistors across the USA, India, Europe, Australia, and various other global locations. BPW85B Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

BPW85B Vishay

BPW85B electronic component of Vishay
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See Product Specifications
Part No.BPW85B
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors NPN Phototransistor 70V 100mW 850nm
Datasheet: BPW85B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7348 ea
Line Total: USD 0.73 
Availability - 1477
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
475
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5688
10 : USD 0.452
30 : USD 0.4022
100 : USD 0.339
500 : USD 0.3122
1000 : USD 0.2951

1477
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7348
10 : USD 0.4191
100 : USD 0.3135
500 : USD 0.2772
1000 : USD 0.2376
5000 : USD 0.2277
10000 : USD 0.2189
25000 : USD 0.2189

722
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.84
10 : USD 0.5502
50 : USD 0.4214
64 : USD 0.2674
176 : USD 0.2534

   
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We are delighted to provide the BPW85B from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPW85B and other electronic components in the Phototransistors category and beyond.

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BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 3 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 20815 Angle of half sensitivity: = 25 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS BPW85 is a silicon NPN phototransistor with high radiant Detector in electronic control and drive circuits sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW85 0.8 to 8 25 450 to 1080 BPW85A 0.8 to 2.5 25 450 to 1080 BPW85B 1.5 to 4 25 450 to 1080 BPW85C 3 to 8 25 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW85 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85A Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85B Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85C Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 3 s, 2 mm from case T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire 0.14 mm R 450 K/W thJA Rev. 2.1, 04-Aug-14 Document Number: 81531 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors 125 100 75 R = 450 K/W thJA 50 25 0 020 40 60 80 100 94 8308 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO Angle of half sensitivity 25 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 2.0 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 2.3 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 180 kHz S C L c TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT BPW85 I 0.8 8.0 mA ca 2 BPW85A I 0.8 2.5 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW85B I 1.5 4.0 mA ca BPW85C I 3.0 8.0 mA ca Rev. 2.1, 04-Aug-14 Document Number: 81531 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V

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8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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