BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 3 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 20815 Angle of half sensitivity: = 25 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS BPW85 is a silicon NPN phototransistor with high radiant Detector in electronic control and drive circuits sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW85 0.8 to 8 25 450 to 1080 BPW85A 0.8 to 2.5 25 450 to 1080 BPW85B 1.5 to 4 25 450 to 1080 BPW85C 3 to 8 25 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW85 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85A Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85B Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85C Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 3 s, 2 mm from case T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire 0.14 mm R 450 K/W thJA Rev. 2.1, 04-Aug-14 Document Number: 81531 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors 125 100 75 R = 450 K/W thJA 50 25 0 020 40 60 80 100 94 8308 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO Angle of half sensitivity 25 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 2.0 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 2.3 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 180 kHz S C L c TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT BPW85 I 0.8 8.0 mA ca 2 BPW85A I 0.8 2.5 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW85B I 1.5 4.0 mA ca BPW85C I 3.0 8.0 mA ca Rev. 2.1, 04-Aug-14 Document Number: 81531 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V