BPW21R Vishay Semiconductors Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a her- metically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic corre- 948394 lation between open circuit voltage and illumination over the same range. The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. Features Applications Hermetically sealed TO-5 case Sensor in exposure and color measuring purposes Flat glass window with built-in color cor- rection filter for visible radiation e4 Cathode connected to case Wide viewing angle = 50 2 Large radiant sensitive area (A = 7.5 mm ) Suitable for visible radiation High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Reverse Voltage 10 V R T 50 C P Power Dissipation 300 mW amb V Junction Temperature T 125 C j T Operating Temperature Range - 55 to + 125 C amb Storage Temperature Range T - 55 to + 125 C stg T Soldering Temperature t 5 s 260 C sd Thermal Resistance Junction/ R 250 K/W thJA Ambient Document Number 81519 www.vishay.com Rev. 1.5, 13-Nov-06 1BPW21R Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Forward Voltage I = 50 mA V 1.0 1.3 V F F I = 20 A, E = 0 V Breakdown Voltage 10 V R (BR) Reverse Dark Current V = 5 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C Diode capacitance 1.2 nF R D V = 5 V, f = 1 MHz, E = 0 C 400 pF R D V = 10 mV R Dark Resistance 38 G R D Optical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Open Circuit Voltage E = 1 klx V 280 450 mV A o Temp. Coefficient of V E = 1 klx TK - 2 mV/K o A Vo E = 1 klx I Short Circuit Current 4.5 9 A A k Temp. Coefficient of I E = 1 klx TK - 0.05 %/K k A lk E = 1 klx, V = 5 V I Reverse Light Current 4.5 9 A A R ra -2 5 Sensitivity V = 5 V, E = 10 to 10 lxS9 nA/lx R A Angle of Half Sensitivity 50 deg Wavelength of Peak Sensitivity 565 nm p Range of Spectral Bandwidth 420 to 675 nm 0.5 V = 0 V, R = 1 k, = 660 nm t Rise Time 3.1 s R L r V = 0 V, R = 1 k, = 660 nm t Fall Time 3.0 s R L f Typical Characteristics T = 25 C unless otherwise specified amb 4 10 1.3 1.2 3 10 1.1 2 10 1.0 V =5V R 1 10 0.9 10 0.8 20 40 60 80 100 120 020 40 60 80 100 120 T -Ambient Temperature (C) 948468 948738 T Ambient Temperature (C) amb amb Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com Document Number 81519 2 Rev. 1.5, 13-Nov-06 I-Reverse Dark Current (nA) ro I RelativeReverse Light Current ra rel