BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 2 Radiant sensitive area (in mm ): 0.78 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 948642 Fast response times Angle of half sensitivity: = 12 Hermetically sealed package Cathode connected to package DESCRIPTION Central chip alignment BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass Compliant to RoHS Directive 2002/95/EC and in lens. accordance with WEEE 2002/96/EC A precise alignment of the chip gives a good coincidence of APPLICATIONS mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. High speed photo detector PRODUCT SUMMARY COMPONENT I ( A) (deg) (nm) ra 0.1 BPW24R 60 12 400 to 1100 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW24R Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 210 mW amb V Junction temperature T 125 C j Operating temperature range T - 40 to + 125 C amb Storage temperature range T - 40 to + 125 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.6, 11-Aug-11 Document Number: 81520 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW24R www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 60 200 V R (BR) Reverse dark current V = 50 V, E = 0 I 210 nA R ro V = 0 V, f = 1 MHz, E = 0 C 11 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 3.8 pF R D V = 20 V, f = 1 MHz, E = 0 C 2.5 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 450 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 55 A e k Temperature coefficient of I E = 1 klx TK 0.1 %/K k A Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 60 A ra V = 20 V R V = 5 V, = 870 nm s()0.60 A/W R Absolute Spectral Sensitivity V = 5 V, = 900 nm s()0.55 A/W R Angle of half sensitivity 12 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 400 1100 nm 0.1 Rise time V = 20 V, R = 50 , = 820 nm t 7ns R L r Fall time V = 20 V, R = 50 , = 820 nm t 7ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 10 1.4 V =50V R 3 V =5V R 10 1.2 = 950 nm 2 10 1.0 1 10 0.8 0 0.6 10 20 40 60 80 100 120 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8454 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 11-Aug-11 Document Number: 81520 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel