X-On Electronics has gained recognition as a prominent supplier of TEMT7000X01 Phototransistors across the USA, India, Europe, Australia, and various other global locations. TEMT7000X01 Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

TEMT7000X01 Vishay

TEMT7000X01 electronic component of Vishay
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Part No.TEMT7000X01
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors Phototransitor 850nm
Datasheet: TEMT7000X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1127 ea
Line Total: USD 1.11 
Availability - 2910
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1882
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5296
10 : USD 0.4426
25 : USD 0.4382
100 : USD 0.3754
250 : USD 0.3716
500 : USD 0.3665
1000 : USD 0.3224

129
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6367
10 : USD 0.5191
30 : USD 0.4593
100 : USD 0.4016
500 : USD 0.3678
1000 : USD 0.3492

4331
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6599
10 : USD 0.4603
100 : USD 0.3567
500 : USD 0.3533
1000 : USD 0.311
3000 : USD 0.292

2910
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1127
5 : USD 0.7273
50 : USD 0.5319
56 : USD 0.304
154 : USD 0.2877

1882
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 23
Multiples : 1
23 : USD 0.4426
25 : USD 0.4382
100 : USD 0.3754
250 : USD 0.3716
500 : USD 0.3679
1000 : USD 0.3224

   
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We are delighted to provide the TEMT7000X01 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TEMT7000X01 and other electronic components in the Phototransistors category and beyond.

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TEMT7000X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES Package type: surface-mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 20043 Package matched with IR emitter series VSMB1940X01 Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Material categorization: for definitions of compliance TEMT7000X01 is a high speed silicon NPN epitaxial planar please see www.vishay.com/doc 99912 phototransistor in a miniature 0805 package for surfac e mounting on printed boards. The device is sensitive to APPLICATIONS visible and near infrared radiation. Detector in automotive applications Light sensors Radiation sensors PRODUCT SUMMARY I (A) ca COMPONENT () (nm) 0.1 2 at E = 1 mW/cm , = 950 nm, V = 5 V e CE TEMT7000X01 225 to 675 60 470 to 1090 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 20 mA C Power power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient According to J-STD-051 R 270 K/W thJA Rev. 1.3, 31-Jul-2020 Document Number: 81961 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMT7000X01 www.vishay.com Vishay Semiconductors 120 100 80 60 R = 270 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21331-1 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 - - V C CEO Collector dark current V = 5 V, E = 0 I - 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C -25- pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 225 450 675 A CA V = 5 V CE Angle of half sensitivity - 60 - Wavelength of peak sensitivity -850 - nm p Range of spectral bandwidth - 470 to 1090 - nm 0.1 Collector emitter saturation voltage I = 0.05 mA V -- 0.4 V C CEsat 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I Tk -1.1 - %/K ca Ica V = 5 V CE BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 10 I = 0 F 1000 1 V = 70 V CE V = 25 V CE V = 5 V 100 CE 0.1 V = 5 V CE 10 0.01 1 0.001 0.01 0.1 1 10 0 1020 3040 5060 7080 90100 21551-1 20594 E - Irradiance (mW/cm) T - Ambient Temperature (C) e amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance Rev. 1.3, 31-Jul-2020 Document Number: 81961 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) P - Power Dissipation (mW) CE0 V I - Collector Light Current (mA) ca

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DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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