TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 3.4 High radiant sensitivity Daylight blocking filter matches with 940 nm emitters Fast response times 94 8673 Angle of half sensitivity: = 30, horizontal 1 Package matches with IR emitter series TSSS2600 Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC TEST2600 is a silicon NPN phototransistor with high radiant sensitivity in black, miniature, side view plastic package with APPLICATIONS daylight blocking filter. Filter bandwidth is matched with Optical switches 900 nm to 950 nm IR emitters. Counters and sorters Interrupters Tape and card readers Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.5 TEST2600 2.5 30 850 to 980 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEST2600 Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Total power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s, 2 mm frpm case T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 450 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81562 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.7, 08-Sep-08 517TEST2600 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 120 100 80 60 40 20 0 02100 3040 5060 70 80 90 100 T - Ambient Temperature (C) 20907 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 6pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 12.5 mA ca V = 5 V CE horizontal 30 deg 1 Angle of half sensitivity vertical 60 deg 2 Wavelength of peak sensitivity 920 nm p Range of spectral bandwidth 850 to 980 nm 0.5 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 4 2.0 10 1.8 V = 5 V 3 CE 10 2 1.6 E = 1 mW/cm e = 950 nm V = 10 V 1.4 CE 2 10 1.2 1.0 1 10 0.8 10 0.6 100 100 20 40 60 80 0 20 40 60 80 94 8249 T - Ambient Temperature (C) 94 8239 T - Ambient Temperature (C) amb amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81562 518 Rev. 1.7, 08-Sep-08 I - Collector Dark Current (nA) CEO P - Power Dissipation (mW) V I - Relative Collector Current ca rel