X-On Electronics has gained recognition as a prominent supplier of BPW16N Phototransistors across the USA, India, Europe, Australia, and various other global locations. BPW16N Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

BPW16N Vishay

BPW16N electronic component of Vishay
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See Product Specifications
Part No.BPW16N
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors NPN Phototransistor 32V 100mW 825nm
Datasheet: BPW16N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8061 ea
Line Total: USD 0.81 
Availability - 11633
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11633
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.5267
100 : USD 0.3634
500 : USD 0.3392
1000 : USD 0.2806
5000 : USD 0.2772
10000 : USD 0.2772
25000 : USD 0.2737
50000 : USD 0.2679

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Maximum Dark Current
Mounting Style
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Type
Wavelength
Brand
Maximum Collector Current
Factory Pack Quantity :
Height
Lens Color/Style
Width
Cnhts
Half Intensity Angle Degrees
Hts Code
Light Current
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BPW16N from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPW16N and other electronic components in the Phototransistors category and beyond.

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BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T- Dimensions (in mm): 1.8 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 40 Compliant to RoHS Directive 2002/95/EC and in 94 8638 accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION APPLICATIONS BPW16N is a silicon NPN phototransistor with high radiant Detector in electronic control and drive circuits sensitivity in clear, T- plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW16N 0.14 40 450 to 1040 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW16N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T- Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 32 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 450 K/W thJA Rev. 1.8, 24-Aug-11 Document Number: 81515 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW16N www.vishay.com Vishay Semiconductors 125 100 75 R = 450 K/W thJA 50 25 0 100 020 40 60 80 94 8308 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 32 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 8pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 0.07 0.14 mA ca V = 5 V CE Angle of half sensitivity 40 deg Wavelength of peak sensitivity 825 nm p Range of spectral bandwidth 450 to 1040 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.01 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 4.8 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5.0 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 120 kHz S C L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 2.0 10 1.8 V = 5 V CE 3 10 2 1.6 E = 1 mW/cm e = 950 nm V = 20 V 1.4 CE 2 10 1.2 1.0 1 10 0.8 0 10 0.6 100 0 20 40 60 80 100 20 40 60 80 T - Ambient Temperature (C) 94 8235 94 8239 T - Ambient Temperature (C) amb amb Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient Temperature Rev. 1.8, 24-Aug-11 Document Number: 81515 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) CEO P - Power Dissipation (mW) V I - Relative Collector Current ca rel

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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