X-On Electronics has gained recognition as a prominent supplier of BPV11F Phototransistors across the USA, India, Europe, Australia, and various other global locations. BPV11F Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

BPV11F Vishay

BPV11F electronic component of Vishay
BPV11F Vishay
BPV11F Phototransistors
BPV11F  Optoelectronics

Images are for reference only
See Product Specifications
Part No. BPV11F
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors T-1.75 900 to 980nm +/-15 deg
Datasheet: BPV11F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0724 ea
Line Total: USD 1.07 
Availability - 10007
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
258
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 70
Multiples : 1
70 : USD 0.9005
88 : USD 0.7183
100 : USD 0.6606

73
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 1.3208
10 : USD 1.0526
30 : USD 0.7891
100 : USD 0.6066
500 : USD 0.545
1000 : USD 0.5141

10007
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.0724
10 : USD 0.7184
100 : USD 0.4714
500 : USD 0.3979
1000 : USD 0.3745
2000 : USD 0.3341
10000 : USD 0.3341
24000 : USD 0.3266

1394
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8802
10 : USD 0.7041
39 : USD 0.4523
107 : USD 0.4266
1000 : USD 0.4116

258
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 70
Multiples : 1
70 : USD 0.9005

805
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 830
Multiples : 830
830 : USD 0.5234

   
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We are delighted to provide the BPV11F from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPV11F and other electronic components in the Phototransistors category and beyond.

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BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters ( 900 nm). p The viewing angle of 15 makes it insensible to ambient straylight. 12784 A base terminal is available to enable biasing and sensitivity control. Features Applications Very high radiant sensitivity Detector for industrial electronic circuitry, mea- surement and control Standard T-1 ( 5 mm) package IR filter for GaAs emitters (950 nm) e4 Angle of half sensitivity = 15 Base terminal available Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Collector Base Voltage 80 V CBO V Collector Emitter Voltage 70 V CEO V Emitter Base Voltage 5V EBO I Collector current 50 mA C t /T = 0.5, t 10 ms I Collector peak current 100 mA p p CM Total Power Dissipation T 47 C P 150 mW amb tot T Junction Temperature 100 C j Storage Temperature Range T - 55 to + 100 C stg T Soldering Temperature t 5 s, 2 mm from body 260 C sd Thermal Resistance Junction/ R 350 K/W thJA Ambient Document Number 81505 www.vishay.com Rev. 1.5, 13-Nov-06 1BPV11F Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Collector Emitter Breakdown I = 1 mA V 70 V C (BR)CEO Voltage Collector-emitter dark current V = 10 V, E = 0 I 150 nA CE CEO V = 5 V, I = 5 mA, E = 0 h DC Current Gain 450 CE C FE Collector-emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 15 pF CE CEO V = 0 V, f = 1 MHz, E = 0 C Collector - base capacitance 19 pF CB CBO Optical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit 2 Collector Light Current I 39 mA E = 1 mW/cm , = 950 nm, ca e V = 5 V CE Angle of Half Sensitivity 15 deg Wavelength of Peak Sensitivity 930 nm p Range of Spectral Bandwidth 900 to 980 nm 0.5 2 Collector Emitter Saturation V 130 300 mV E = 1 mW/cm , = 950 nm, CEsat e Voltage I = 1 mA C Turn-On Time V = 5 V, I = 5 mA, R = 100 t 6 s S C L on V = 5 V, I = 5 mA, R = 100 t Turn-Off Time 5 s S C L off Cut-Off Frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Typical Characteristics T = 25 C unless otherwise specified amb 4 200 10 160 3 10 120 V = 10 V CE R thJA 2 10 80 1 10 40 0 10 0 20 40 60 80 100 100 20 40 60 80 T Ambient Temperature (C) 948300 94 8249 T - Ambient Temperature (C) amb amb Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.com Document Number 81505 2 Rev. 1.5, 13-Nov-06 P Total Power Dissipation (mW) tot I - CollectorDark Current (nA) CEO

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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