BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters ( 900 nm). p The viewing angle of 15 makes it insensible to ambient straylight. 12784 A base terminal is available to enable biasing and sensitivity control. Features Applications Very high radiant sensitivity Detector for industrial electronic circuitry, mea- surement and control Standard T-1 ( 5 mm) package IR filter for GaAs emitters (950 nm) e4 Angle of half sensitivity = 15 Base terminal available Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Collector Base Voltage 80 V CBO V Collector Emitter Voltage 70 V CEO V Emitter Base Voltage 5V EBO I Collector current 50 mA C t /T = 0.5, t 10 ms I Collector peak current 100 mA p p CM Total Power Dissipation T 47 C P 150 mW amb tot T Junction Temperature 100 C j Storage Temperature Range T - 55 to + 100 C stg T Soldering Temperature t 5 s, 2 mm from body 260 C sd Thermal Resistance Junction/ R 350 K/W thJA Ambient Document Number 81505 www.vishay.com Rev. 1.5, 13-Nov-06 1BPV11F Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Collector Emitter Breakdown I = 1 mA V 70 V C (BR)CEO Voltage Collector-emitter dark current V = 10 V, E = 0 I 150 nA CE CEO V = 5 V, I = 5 mA, E = 0 h DC Current Gain 450 CE C FE Collector-emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 15 pF CE CEO V = 0 V, f = 1 MHz, E = 0 C Collector - base capacitance 19 pF CB CBO Optical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit 2 Collector Light Current I 39 mA E = 1 mW/cm , = 950 nm, ca e V = 5 V CE Angle of Half Sensitivity 15 deg Wavelength of Peak Sensitivity 930 nm p Range of Spectral Bandwidth 900 to 980 nm 0.5 2 Collector Emitter Saturation V 130 300 mV E = 1 mW/cm , = 950 nm, CEsat e Voltage I = 1 mA C Turn-On Time V = 5 V, I = 5 mA, R = 100 t 6 s S C L on V = 5 V, I = 5 mA, R = 100 t Turn-Off Time 5 s S C L off Cut-Off Frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Typical Characteristics T = 25 C unless otherwise specified amb 4 200 10 160 3 10 120 V = 10 V CE R thJA 2 10 80 1 10 40 0 10 0 20 40 60 80 100 100 20 40 60 80 T Ambient Temperature (C) 948300 94 8249 T - Ambient Temperature (C) amb amb Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.com Document Number 81505 2 Rev. 1.5, 13-Nov-06 P Total Power Dissipation (mW) tot I - CollectorDark Current (nA) CEO