X-On Electronics has gained recognition as a prominent supplier of BPV22F Photodiodes across the USA, India, Europe, Australia, and various other global locations. BPV22F Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BPV22F Vishay

BPV22F electronic component of Vishay
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See Product Specifications
Part No.BPV22F
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes Sideview 870-1050nm +/-60 deg
Datasheet: BPV22F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0592 ea
Line Total: USD 1.06 
Availability - 775
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
775
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0592
10 : USD 0.675
100 : USD 0.5175
500 : USD 0.4865
1000 : USD 0.4451
4000 : USD 0.4059
24000 : USD 0.4014

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BPV22F from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPV22F and other electronic components in the Photodiodes category and beyond.

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BPV22F www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: side view Dimensions (in mm): 4.5 x 5 x 6 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times 94 8633 Angle of half sensitivity: = 60 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BPV22F is a PIN photodiode with high speed and high APPLICATIONS radiant sensitivity in a black, plastic package with side view High speed detector for infrared radiation lens and daylight blocking filter. Filter bandwdith is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % Infrared remote control and free air data transmission of sensitivity improvement in comparison with flat package. systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV22F 80 60 870 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV22F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.6, 24-Aug-11 Document Number: 81508 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV22F www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Serial resistance V = 12 V, f = 1 MHz R 400 R S 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 370 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 75 A e k 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 55 80 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I TK 0.1 %/K ra Ira V = 10 V R V = 5 V, = 870 nm s()0.35 A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s()0.6 A/W R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 870 to 1050 nm 0.5 Quantum efficiency = 950 nm 90 % -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R 12 Detectivity V = 10 V, = 950 nm D* 6 x 10 cmHz/W R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f V = 12 V, R = 1 k, = 870 nm f 4MHz R L c Cut-off frequency V = 12 V, R = 1 k, = 950 nm f 1MHz R L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 0 20 40 60 80 100 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 24-Aug-11 Document Number: 81508 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
BC COMPONENTS
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BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
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General Semi
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GS
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Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
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SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
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TECHNO
VIR
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Vishay Tansitor
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Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
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Vishay / Milwaukee
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Vishay BC Components
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VISHAY CERA-MITE
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VISHAY ROEDERSTEIN
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