TEPT5600 Vishay Semiconductors Ambient Light Sensor Description TEPT5600 is a silicon NPN epitaxial planar photo transistor in a standard T-1 3/4 plastic package. Peak of responsivity is in the visible spectrum. Infra- red spectrum is suppressed. Features 94 8390 Responsivity adapted to human eye Wide angle of half sensitivity = 20 Lead (Pb)-free component e4 Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Applications Replacement of cadmium sulfide (CdS) photo resistors Ambient light sensor Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Collector emitter voltage V 6V CEO Emitter collector voltage V 1.5 V ECO Collector current I 20 mA C Total power dissipation T 55 C P 100 mW amb tot Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature 2 mm distance to package, t 3 s T 260 C sd Thermal resistance junction/ R 450 K/W thJA ambient Basic Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Collector emitter breakdown I = 0.1 mA V6V C CEO voltage Collector dark current V = 5 V, E = 0 I 350 nA CE CEO Collector-emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 16 pF CE CEO Photo current E = 20 lx, CIE illuminant A, I 25 70 140 A v PCE V = 5 V CE E = 100 lx, CIE illuminant A, I 350 A v PCE V = 5 V CE Angle of half sensitivity 20 deg Wavelength of peak sensitivity 570 nm p Range of spectral bandwidth 360 to 970 nm 0.1 Document Number 84768 www.vishay.com Rev. 1.3, 28-Nov-06 1TEPT5600 Vishay Semiconductors Typical Characteristics T = 25 C, unless otherwise specified amb -6 10 10000 = V 5 V C E -7 10 -8 10 1000 -9 10 -10 10 100 -11 10 -12 10 -13 10 10 - 40 - 20 0 20 40 60 80 100 10 100 1000 T - Ambient Temperature (C) amb 20204 E - Illuminance (lx) 19558 V Figure 1. Collector Dark Current vs. Ambient Temperature Figure 4. Photo Current vs. Illuminance 2.2 25 f = 1 MHz 2.0 1.8 20 1.6 1.4 15 1.2 1.0 10 0.8 0.6 0.4 5 0.2 V = 5 V, T = 2 856 K C E 0.0 0 - 40 - 20 0 20 40 60 80 100 0.1 1.0 10.0 T - Ambient Temperature (C) 19559 amb 19762 V - Collector Emitter Voltage (V) CE Figure 2. Relative Photo Current vs. Ambient Temperature Figure 5. Collector Emitter Capacitance vs. Collector Emitter Voltage 700 1.2 650 200 lx 600 1.0 550 500 450 0.8 400 350 100 lx 0.6 300 250 0.4 200 50 lx 150 0.2 100 20 lx 50 0 0.0 0 1 2 3 4 5 300 400 500 600 700 800 900 1000 1100 20205 V - Collector Emitter Voltage (V) CE 18465 - Wavelength (nm) Figure 3. Photo Current vs. Collector Emitter Voltage Figure 6. Relative Spectral Sensitivity vs. Wavelength www.vishay.com Document Number 84768 2 Rev. 1.3, 28-Nov-06 I - Photo Current (A) PCE I - Collector Dark Current (A) CEO I - Relative Photo Current PCE rel I - Photo Current (A) S() -Relative Spectral Sensitivity C - Collector Emitter Capacitance (pF) PCE CE0 rel