VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW VBP104S Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 2 Radiant sensitive area (in mm ): 4.4 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 65 VBP104SR Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21733-1 APPLICATIONS DESCRIPTION High speed photo detector VBP104S and VBP104SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) 2 including the chip with a 4.4 mm sensitive area detecting visible and near infrared radiation. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VBP104S 35 65 430 to 1100 VBP104SR 35 65 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VBP104S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBP104SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81170 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.0, 13-Aug-09 1 VBP104S, VBP104SR Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 48 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 17 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 32 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 25 35 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V =5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81170 2 Rev. 1.0, 13-Aug-09 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro