X-On Electronics has gained recognition as a prominent supplier of VBP104SR Photodiodes across the USA, India, Europe, Australia, and various other global locations. VBP104SR Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

VBP104SR Vishay

Hot VBP104SR electronic component of Vishay
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See Product Specifications
Part No.VBP104SR
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes Reverse gullwing 430-1100nm +/-65 deg
Datasheet: VBP104SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6318 ea
Line Total: USD 0.63 
Availability - 412
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
412
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6318
10 : USD 0.5249
30 : USD 0.4714
100 : USD 0.42
500 : USD 0.3893
1000 : USD 0.3722

1785
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.287
10 : USD 0.8019
100 : USD 0.572
500 : USD 0.4928
1000 : USD 0.4345
2000 : USD 0.4169

1940
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4822
2000 : USD 0.4774
3000 : USD 0.4725
5000 : USD 0.469
7000 : USD 0.4594
10000 : USD 0.4499
25000 : USD 0.43

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Height
Type
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VBP104SR from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBP104SR and other electronic components in the Photodiodes category and beyond.

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VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW VBP104S Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 2 Radiant sensitive area (in mm ): 4.4 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 65 VBP104SR Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21733-1 APPLICATIONS DESCRIPTION High speed photo detector VBP104S and VBP104SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) 2 including the chip with a 4.4 mm sensitive area detecting visible and near infrared radiation. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VBP104S 35 65 430 to 1100 VBP104SR 35 65 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VBP104S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBP104SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81170 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.0, 13-Aug-09 1 VBP104S, VBP104SR Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 48 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 17 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 32 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 25 35 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V =5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81170 2 Rev. 1.0, 13-Aug-09 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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Vishay / MCB Industrie
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