X-On Electronics has gained recognition as a prominent supplier of VBT1045BP-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VBT1045BP-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VBT1045BP-E3/4W Vishay

VBT1045BP-E3/4W electronic component of Vishay
VBT1045BP-E3/4W Vishay
VBT1045BP-E3/4W Schottky Diodes & Rectifiers
VBT1045BP-E3/4W  Semiconductors

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Part No. VBT1045BP-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 45V TrenchMOS
Datasheet: VBT1045BP-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
85: USD 0.202 ea
Line Total: USD 17.17 
Availability - 0
MOQ: 85  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 05 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.202
8000 : USD 0.187
10000 : USD 0.187

0
Ship by Thu. 01 May to Mon. 05 May
MOQ : 8000
Multiples : 8000
8000 : USD 0.3652

0
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 1.0813
3 : USD 0.896
10 : USD 0.7817
24 : USD 0.6438
65 : USD 0.6044

0
Ship by Mon. 05 May to Fri. 09 May
MOQ : 85
Multiples : 1
85 : USD 0.202

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VBT1045BP-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBT1045BP-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VBT1045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.41 V at I = 5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 Material categorization: for definitions of compliance VBT1045BP please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for click logo to get started DESIGN SUPPORT TOOLS protection, using DC forward current without reverse bias. Models MECHANICAL DATA Available 2 Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 10 A F(AV) Terminals: matte tin plated leads, solderable per V 45 V RRM J-STD-002 and JESD 22-B102 I 100 A FSM E3 suffix meets JESD 201 class 1A whisker test V at I = 10 A 0.52 V F F Polarity: as marked T max. (AC mode) 150 C OP Mounting Torque: 10 in-lbs maximum T max. (DC forward current) 200 C J 2 Package D PAK (TO-263AB) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 10 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 100 A FSM Operating junction temperature range (AC mode) T -40 to +150 C OP (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F T = 25 C A I = 10 A 0.57 0.68 F (1) Instantaneous forward voltage V V F I = 5 A 0.41 - F T = 125 C A I = 10 A 0.52 0.64 F T = 25 C - 500 A A (2) Reverse current V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 89452 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT1045BP-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045BPUNIT Typical thermal resistance R 3.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT1045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 10 T = 150 C 10 A T = 125 C A 8 1 T = 100 C A 6 0.1 4 DC Forward Current at 0.01 2 Thermal Equilibrium T = 25 C A 0.001 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 10 000 100 T = 25 C J f = 1.0 MHz T = 150 C V = 50 mV A sig p-p 10 T = 125 C A 1000 T = 100 C A 1 T = 25 C A 100 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Junction Capacitance Revision: 20-Jun-2018 Document Number: 89452 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Instantaneous Forward Current (A) DC Forward Current (A) Junction Capacitance (pF) Instantaneous Reverse Current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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