VBT2045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.33 V at I = 5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 Material categorization: for definitions of compliance PIN 1 K please see www.vishay.com/doc 99912 PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA 2 PRIMARY CHARACTERISTICS Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating I 20 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM I 160 A Terminals: matte tin plated leads, solderable per FSM V at I = 20 A 0.51 V J-STD-002 and JESD 22-B102 F F T max. (AC mode) 150 C E3 suffix meets JESD 201 class 1A whisker test OP T max. (DC forward current) 200 C J Polarity: as marked 2 Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configurations Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT2045BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 20 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 160 A FSM Operating junction temperature range (AC mode) T -40 to +150 C OP (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.44 - F I = 10 A T = 25 C 0.49 - F A I = 20 A 0.57 0.66 F (1) Instantaneous forward voltage V V F I = 5 A 0.33 - F I = 10 A T = 125 C 0.41 - F A I = 20 A 0.51 0.63 F T = 25 C - 2000 A A (2) Reverse current V = 45 V I R R T = 125 C 10 30 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 21-Jun-2018 Document Number: 89450 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT2045BP-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT2045BPUNIT Typical thermal resistance R 1.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT2045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT2045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 100 T = 150 C A 20 T = 125 C 10 A 16 T = 100 C A 1 12 0.1 8 DC Forward Current at T = 25 C 0.01 A 4 Thermal Equilibrium 0 0.001 0 25 50 75 100 125 150 175 200 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 100 10 000 T = 25 C J f = 1.0 MHz T = 150 C A V = 50 mV sig p-p 10 T = 125 C A T = 100 C A 1000 1 T = 25 C A 0.1 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Junction Capacitance Revision: 21-Jun-2018 Document Number: 89450 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Instantaneous Forward Current (A) DC Forward Current (A) Junction Capacitance (pF) Instantaneous Reverse Current (mA)