VBT4045BP-E3/4W Vishay

VBT4045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.28 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS 2 Low forward voltage drop, low power losses D PAK (TO-263AB) High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 2 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. click logo to get started DESIGN SUPPORT TOOLS MECHANICAL DATA Models 2 Available Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade PRIMARY CHARACTERISTICS Terminals: Matte tin plated leads, solderable per I 40 A F(AV) J-STD-002 and JESD 22-B102 V 45 V RRM E3 suffix meets JESD 201 class 1A whisker test I 240 A FSM Polarity: As marked V at I = 40 A 0.51 V F F Mounting Torque: 10 in-lbs maximum T max. (AC mode) 150 C OP T max. (DC forward current) 200 C J 2 Package D PAK (TO-263AB) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT4045BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 40 A F(DC) Peak forward surge current 8.3 ms single half sine-wave I 240 A FSM superimposed on rated load Operating junction temperature range (AC mode) T -40 to +150 C OP (1) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test Revision: 02-Jul-2018 Document Number: 89442 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT4045BP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.41 - F I = 20 A T = 25 C 0.50 - F A I = 40 A 0.57 0.67 F (1) Instantaneous forward voltage V V F I = 5 A 0.28 - F I = 20 A T = 125 C 0.41 - F A I = 40 A 0.51 0.63 F T = 25 C - 3000 A A (2) Reverse current V = 45 A I R R T = 125 C 29 85 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT4045BP UNIT Typical thermal resistance R 0.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT4045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT4045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 45 100 40 T = 150 C A 35 T = 125 C A 30 10 T = 100 C A 25 20 T = 25 C A 15 1 10 DC Forward Current at 5 Thermal Equilibrium 0 0.1 0 25 50 75 100 125 150 175 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics Revision: 02-Jul-2018 Document Number: 89442 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A) Instantaneous Forward Current (A)