VBT1045C-E3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C 1 Material categorization: for definitions of compliance VBT1045C please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and click logo to get started DESIGN SUPPORT TOOLS reverse battery protection. Models Available MECHANICAL DATA 2 Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 2 x 5.0 A F(AV) Terminals: matte tin plated leads, solderable per V 45 V RRM J-STD-002 and JESD 22-B102 I 100 A FSM E3 suffix meets JESD 201 class 1A whisker test V at I = 5.0 A 0.41 V F F Polarity: as marked T max. 150 C J Mounting Torque: 10 in-lbs maximum 2 Package D PAK (TO-263AB) Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 100 A FSM Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 89358 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT1045C-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045CUNIT per diode 3.5 Typical thermal resistance R C/W JC per device 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1045C-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT1045C-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 T = 150 C 10 A 8 10 T = 125 C A 6 T = 100 C A 4 1 T = 25 C A 2 0 0.1 100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 4.0 D = 0.5 D = 0.8 100 3.5 D = 0.3 T = 150 C 3.0 A 10 T = 125 C D = 0.2 A 2.5 D = 1.0 1 T = 100 C A 2.0 D = 0.1 1.5 0.1 T 1.0 0.01 0.5 T = 25 C D = t /T t p p A 0 0123 4 56 0.001 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89358 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)