V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.42 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, per V40100G VF40100G 1 PIN 1 PIN 1 JESD 22-B106 (for TO-220AB, ITO-220AB, and PIN 2 PIN 2 TO-262AA package) PIN 3 CASE PIN 3 Material categorization: for definitions of compliance 2 D PAK (TO-263AB) TO-262AA please see www.vishay.com/doc 99912 K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters and reverse battery protection. 3 1 2 VB40100G VI40100G 1 MECHANICALDATA PIN 1 K PIN 1 PIN 2 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) and PIN 2 HEATSINK K PIN 3 TO-262AA Molding compound meets UL 94 V-0 flammability rating click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per Models J-STD-002 and JESD 22-B102 Available E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 20 A F(AV) Mounting Torque: 10 in-lbs maximum V 100 V RRM I 200 A FSM V at I = 20 A 0.67 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 40 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed I 200 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 90 mH per diode E 230 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 1.0 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 19-Jun-2018 Document Number: 88970 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 100 min. - R A BR I = 5 A 0.49 - F I = 10 A T = 25 C 0.59 - F A V I = 20 A 0.75 0.81 Instantaneous forward voltage F V F (1) per diode I = 5 A 0.42 - F I = 10 A T = 125 C 0.54 - F A I = 20 A 0.67 0.73 F T = 25 C 12 - A A V = 70 V R T = 125 C 8 - mA A (2) Reverse current per diode I R T = 25 C 55 500 A A V = 100 V R T = 125 C 21 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Typical thermal resistance per diode R 2.0 5.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40100G-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF40100G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB40100G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40100G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI40100G-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 50 18 D = 0.8 Resistive or Inductive Load 16 40 VB(I)40100G D = 0.5 14 D = 0.3 D = 1.0 VF40100G 12 30 10 D = 0.2 8 20 T 6 D = 0.1 4 10 D = t /T t 2 p p 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 19-Jun-2018 Document Number: 88970 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)