VB60170G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-263AB Low forward voltage drop, low power losses High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Material categorization: For definitions of compliance 2 please see www.vishay.com/doc 99912 1 VB60170G TYPICAL APPLICATIONS PIN 1 K For use in high frequency DC/DC converters, switching PIN 2 HEATSINK power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-263AB I 2 x 30 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 170 V Base P/N-E3 - RoHS-compliant, commercial grade RRM I 210 A FSM Terminals: Matte tin plated leads, solderable per V at I = 30 A 0.72 V J-STD-002 and JESD 22-B102 F F E3 suffix meets JESD 201 class 1A whisker test T max. 175 C J Package TO-263AB Polarity: As marked Diode variations Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60170G UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 60 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 210 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 11-Sep-13 Document Number: 89950 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VB60170G-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.65 - F I = 15 A T = 25 C 0.78 - F A I = 30 A 0.87 1.02 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.50 - F I = 15 A T = 125 C 0.62 - F A I = 30 A 0.72 0.80 F T = 25 C 1.5 - A A V = 136 V R T = 125 C 2.5 - mA A (2) Reverse current per diode I R T = 25 C - 450 A A V = 170 V R T = 125 C 5 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60170GUNIT per diode 1.0 Typical thermal resistance R C/W JC per device 0.7 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB60170G-E3/4W 1.38 4W 50/tube Tube TO-263AB VB60170G-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 30.0 D = 0.8 D = 0.5 35 D = 0.3 25.0 D = 0.2 30 D = 1.0 20.0 D = 0.1 25 20 15.0 15 T 10.0 10 5.0 D = t /T t 5 p p 0 0.0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 11-Sep-13 Document Number: 89950 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)