VB60170G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C 1 Material categorization: for definitions of compliance VB60170G please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching click logo to get started DESIGN SUPPORT TOOLS power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models Available MECHANICAL DATA 2 Case: D PAK (TO-263AB) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 170 V RRM Terminals: matte tin plated leads, solderable per I 210 A FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.72 V F F E3 suffix meets JESD 201 class 1A whisker test T max. 175 C J Polarity: as marked 2 Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60170G UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 60 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 210 A FSM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.65 - F I = 15 A T = 25 C 0.78 - F A I = 30 A 0.87 1.02 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.50 - F I = 15 A T = 125 C 0.62 - F A I = 30 A 0.72 0.80 F T = 25 C 1.5 - A A V = 136 V R T = 125 C 2.5 - mA A (2) Reverse current per diode I R T = 25 C - 450 A A V = 170 V R T = 125 C 5 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms Revision: 20-Jun-2018 Document Number: 89950 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VB60170G-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60170GUNIT per diode 1.0 Typical thermal resistance R C/W JC per device 0.7 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB60170G-E3/4W 1.38 4W 50/tube Tube TO-263AB VB60170G-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 100 35 T = 175 C A 30 T = 150 C A 10 25 T = 125 C A 20 T = 100 C A 15 1 10 T = 25 C A 5 0 0.1 0 25 50 75 100 125 150 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 30.0 100 D = 0.8 D = 0.5 T = 175 C A D = 0.3 25.0 10 T = 150 C A D = 0.2 T = 125 C A D = 1.0 20.0 D = 0.1 1 T = 100 C A 15.0 0.1 T 10.0 0.01 T = 25 C A 5.0 0.001 D = t /T t p p 0.0 0.0001 0 5 10 15 20 25 30 35 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89950 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)