VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.52 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 3 3 and TO-262AA package) 2 2 1 1 Material categorization: for definitions of compliance VT1080S VFT1080S please see www.vishay.com/doc 99912 PIN 1 PIN 1 PIN 2 PIN 2 CASE PIN 3 PIN 3 TYPICAL APPLICATIONS For use in high frequency converters, switching power TO-263AB TO-262AA supplies, freewheeling diodes, OR-ing diode, DC/DC K converters and reverse battery protection. K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and A TO-262AA NC 3 Molding compound meets UL 94 V-0 flammability rating 2 1 Base P/N-E3 - RoHS-compliant, commercial grade VBT1080S VIT1080S Terminals: matte tin plated leads, solderable per NC K PIN 1 PIN 2 J-STD-002 and JESD 22-B102 A HEATSINK K PIN 3 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 10 A F(AV) V 80 V RRM I 100 A FSM V at I = 10 A 0.60 V F F T max. 150 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1080S VFT1080S VBT1080S VIT1080S UNIT Maximum repetitive peak reverse voltage V 80 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 110 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 1.0 A p J RRM Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89165 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 80 (minimum) - V R A BR I = 5 A 0.57 - F T = 25 C A I = 10 A 0.67 0.81 F (1) Instantaneous forward voltage V V F I = 5 A 0.52 - F T = 125 C A I = 10 A 0.60 0.70 F T = 25 C 20 600 A A (2) Reverse current V = 80 V I R R T = 125 C 10 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1080SVFT1080SVBT1080SVIT1080SUNIT Typical thermal resistance R 2.2 5.5 2.2 2.2 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1080S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT1080S-E3/4W 1.73 4W 50/tube Tube TO-263AB VBT1080S-E3/4W 1.36 4W 50/tube Tube TO-263AB VBT1080S-E3/8W 1.36 8W 800/reel Tape and reel TO-262AA VIT1080S-E3/4W 1.43 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89165 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000