VBT1045CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C 1 T 200 C max. in solar bypass mode application J VBT1045CBP Material categorization: for definitions of compliance PIN 1 K please see www.vishay.com/doc 99912 PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA 2 PRIMARY CHARACTERISTICS Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating I 2 x 5.0 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM I 100 A Terminals: matte tin plated leads, solderable per FSM V at I = 5.0 A 0.41 V J-STD-002 and JESD 22-B102 F F T max. (AC mode) 150 C E3 suffix meets JESD 201 class 1A whisker test OP max. (DC forward current) 200 C T J Polarity: as marked 2 Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configurations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I 100 A FSM Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 89371 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT1045CBP-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045CBPUNIT per diode 3.5 Typical thermal resistance R C/W JC per device 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1045CBP-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT1045CBP-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 1010 T = 150 C A 8 10 T = 125 C A 6 T = 100 C A 4 1 T = 25 C A 2 DC Forward Current atDC Forward Current at Thermal EThermal Eqquilibriumuilibrium 00 0.1 100 120 140 160 180 200100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 4.0 100 D = 0.5 D = 0.8 3.5 D = 0.3 T = 150 C A 10 3.0 T = 125 C A 2.5 D = 0.2 1 T = 100 C A D = 1.0 2.0 D = 0.1 1.5 0.1 T 1.0 0.01 0.5 T = 25 C A D = t /T t p p 0 0.001 0123 4 56 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89371 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) DC Forward Rectified Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current (mA)