X-On Electronics has gained recognition as a prominent supplier of VBT1045CBP-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VBT1045CBP-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VBT1045CBP-E3/4W Vishay

VBT1045CBP-E3/4W electronic component of Vishay
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Part No.VBT1045CBP-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 45V Schottky PV Solar Bypass
Datasheet: VBT1045CBP-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.4835 ea
Line Total: USD 3868 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 8000
Multiples : 1
8000 : USD 0.5652
9000 : USD 0.5599
10000 : USD 0.5546
12000 : USD 0.5493

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 3.111
10 : USD 2.6779
25 : USD 2.257
100 : USD 1.9215
250 : USD 1.7019
500 : USD 1.5494

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.4835

   
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We are delighted to provide the VBT1045CBP-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBT1045CBP-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VBT1045CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C 1 T 200 C max. in solar bypass mode application J VBT1045CBP Material categorization: for definitions of compliance PIN 1 K please see www.vishay.com/doc 99912 PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA 2 PRIMARY CHARACTERISTICS Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating I 2 x 5.0 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM I 100 A Terminals: matte tin plated leads, solderable per FSM V at I = 5.0 A 0.41 V J-STD-002 and JESD 22-B102 F F T max. (AC mode) 150 C E3 suffix meets JESD 201 class 1A whisker test OP max. (DC forward current) 200 C T J Polarity: as marked 2 Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configurations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I 100 A FSM Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 89371 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT1045CBP-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045CBPUNIT per diode 3.5 Typical thermal resistance R C/W JC per device 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1045CBP-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT1045CBP-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 1010 T = 150 C A 8 10 T = 125 C A 6 T = 100 C A 4 1 T = 25 C A 2 DC Forward Current atDC Forward Current at Thermal EThermal Eqquilibriumuilibrium 00 0.1 100 120 140 160 180 200100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 4.0 100 D = 0.5 D = 0.8 3.5 D = 0.3 T = 150 C A 10 3.0 T = 125 C A 2.5 D = 0.2 1 T = 100 C A D = 1.0 2.0 D = 0.1 1.5 0.1 T 1.0 0.01 0.5 T = 25 C A D = t /T t p p 0 0.001 0123 4 56 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89371 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) DC Forward Rectified Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current (mA)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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