VTP1232FH Excelitas

photodiode S & -t r an SiSt or S for high-volu Me a pplication S Silicon Photodiodes VTP Series FAST RESPOn SE SILIc On PHOTODIODES FOR In DuSTRIAL An D cOMMER c IAL APPLIc ATIOn S Silicon Photodiodes VTP Series a pplications Smoke detection Barcode scanning Light meters Pulse oximeters features and Benefits Visible to IR spectral range Integral visible rejection filters available 1 to 2 % linearity over 7 to 9 decades Low dark currents product description Photodiodes in this series have been designed for low junction capacitance. eTh lower the capacitance, High shunt resistance the faster the response of the photodiode when the RC time constant is your limiting factor. Also, Low capacitance speed can be further increased by reverse biasing the photodiodes. These devices have excellent response in the IR region and are well matched to IR LEDs (VTE series). Some photodiodes are available in packages which incorporate a visible rejection lfi ter, eeff ctively blocking light below 700 nm. Photodiodes made with the VTP process are suitable for operation under reverse bias conditions but may be used in the photovoltaic mode. Typical reverse breakdown voltages are around 140 V. Low dark currents under reverse bias are also a feature of this series. Product Table Silicon Photodiodes Vt P Series Short c ircuit Junction Radiometric Peak Package Active Area c urrent Dark c urrent c apacitance Sensitivity P Spectral Range Wavelength Active Area min max max typ typ Symbol I I c S NEP Sc D J R RAn GE P 2 mm A nA pF A/W nm nm W /Hz -14 Vt P100H Flat sidelooker IRT 7.45 35 30 50 0.5 725 -1150 925 2.5 x 10 -14 Vt P100c H Flat sidelooker 7.45 50 30 50 0.55 400 -1150 925 9.0 x 10 -14 Vt P1012H TO-46 1.6 10 7 6 0.55 400 -1150 925 8.7 x 10 -14 Vt P1112H TO-46 lensed 1.6 30 7 6 0.55 400 -1150 925 8.7 x 10 Vt P1188SH Lensed ceramic 11 200 (typ) 30 300 0.55 400 -1100 925 - T-1 flat 1.219 0.7 10 18 0.27 400 - 725 550 - Vt P1220FBH Vt P1232H T-1 2.326 100 25 180 0.6 400 -1100 920 - Vt P1232FH T-1 flat 2.326 21 25 180 0.6 400 -1100 920 - Vt P1332H T-1 IRT 2.326 75 25 180 0.55 725 -1150 920 - Vt P1332FH T-1 flat IRT 2.326 17 25 180 0.55 725 -1150 920 - -13 Vt P3310LAH T1 0.684 24 35 25 0.55 400 -1150 925 1.9 x 10 -13 Vt P3410LAH T1 IRT 0.684 15 35 25 0.55 700 -1150 925 1.9 x 10 Electrical characteristics at T = 25 C Ambient www.excelitas.com 26Graph 3 Relative Dark c urrent vs. t emperature* Relative Dark c urrent 1000 100 10 1 0.1 0 25 50 75 100 Temperature (Degrees c ) Product Table Silicon Photodiodes Vt P Series Short c ircuit Junction Radiometric Peak Package Active Area c urrent Dark c urrent c apacitance Sensitivity Spectral Range Wavelength Active Area P min max max typ typ Symbol ISc ID c J SR NEP RAn GE P 2 u nit mm A nA pF A/W nm nm W /Hz -14 Vt P413H Lensed sidelooker 7.45 120 (typ) 30 50 0.55 400 -1150 925 2.3 x 10 Vt P4085H Ceramic 21 200 (typ) 100 500 0.55 400 -1100 925 - Vt P4085SH Ceramic 21 200 (typ) 50 500 0.55 400 -1100 925 - -13 Vt P5050H TO-5 7.45 40 18 24 0.55 400 -1150 925 1.4 x 10 -13 Vt P6060H TO-8 20.6 120 35 60 0.55 400 -1150 925 1.9 x 10 -13 Vt P7110H Lateral 0.684 6 35 25 0.55 400 -1150 925 1.9 x 10 -13 Vt P7210H Lateral IRT 0.684 5 35 25 0.55 700 -1150 925 1.9 x 10 -14 Vt P7840H Lensed sidelooker IRT 5.27 50 20 40 0.55 725 -1150 925 5.3 x 10 -13 Vt P8350H Ceramic 7.45 65 30 50 0.55 400 -1150 925 1.8 x 10 -13 Vt P8440H 8 mm ceramic 5.16 30 15 15 0.55 400 -1150 925 1.3 x 10 -13 Vt P8551H Mini-DIP 7.45 50 30 50 0.55 400 -1150 925 1.8 x 10 -13 Vt P8651H Mini-DIP IRT 7.45 35 30 50 0.5 725 -1150 925 2.0 x 10 -13 Vt P8740 t RH SMT clear plastic 5.269 75 20 50 0.6 400 -1150 925 2.0 x 10 -13 Vt P8840 t RH SMT IRT 5.269 50 20 50 0.6 725 -1150 925 2.0 x 10 -14 Vt P9412H 6 mm ceramic 1.6 10 7 6 0.55 400 -1150 925 8.7 x 10 Vt P9812FH T-1 flat 1.548 0.7 10 18 0.034 400 - 700 580 - SR10SPD 880-0.9 SMT 0.73 - 0.01 - - 820-935 890 - Electrical characteristics at T = 25 C Ambient Graph 1 Graph 2 Absolute Spectral Response* Rise/Fall t imes n on Saturated* Radiometric Sensitivity, A/ W Response Time (sec 10 90 %) 0.7 10 0.6 0.5 1 0.4 0.3 0.1 0.2 0.1 0.01 0 200 400 600 800 1000 1200 0 00..11 11 10 Wavelength (mm) RLc J Product (sec) Q.E. = 0.50 glass window or epoxy coated photovoltaic V = 10 V R.c . limit Q.E. = 0.75 visible blocking lfi ter Graph 4 Graph 5 Graph 6 t emp. c oefficient of Light c urrent vs. Wavelength* Rel. Junction c apacitance vs. Voltage* Rel. Short c ircuit c urrent vs. illumination* Relative c apacitance Temperature c oefficient (%) / Degree ( c ) Relative Short c ircuit c urrent 1.4 0.5 10000 1.2 0.4 1000 1 0.3 100 0.8 0.2 10 0.6 0.1 1 0.4 0 0.1 0.2 -0.1 0.01 0 -0.2 -50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 400 600 800 1000 1200 0.01 0.1 1 10 100 1000 10000 Bias Voltage (Volts) Wavelength (mm) Illumination (fc 2850 K) small area large area * Typical characteristic curves 25 C (unless otherwise noted) www.excelitas.com 27 Silicon Photodiodes VTP Series