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X-On Electronics has gained recognition as a prominent supplier of VEMT2000X01 Phototransistors across the USA, India, Europe, Australia, and various other global locations. VEMT2000X01 Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

VEMT2000X01 Vishay

VEMT2000X01 electronic component of Vishay
VEMT2000X01 Vishay
VEMT2000X01 Phototransistors
VEMT2000X01  Optoelectronics

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See Product Specifications
Part No. VEMT2000X01
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors Reverse gullwing 790-970nm +/-15 deg
Datasheet: VEMT2000X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8763 ea
Line Total: USD 0.88 
Availability - 8715
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.7474
10 : USD 0.7305
30 : USD 0.6179
100 : USD 0.5467

8715
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.8763
10 : USD 0.5338
100 : USD 0.352
500 : USD 0.33
1000 : USD 0.2904
2500 : USD 0.2695
6000 : USD 0.2574

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Maximum Power Dissipation
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Dark Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Wavelength
Brand
Cnhts
Half Intensity Angle Degrees
Hts Code
Light Current
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VEMT2000X01 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VEMT2000X01 and other electronic components in the Phototransistors category and beyond.

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VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times VEMT2020X01 VEMT2000X01 21568 Angle of half sensitivity: = 15 Package matched with IR emitter series VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Compliant to RoHS directive 2002/95/EC and in VEMT2000X01 series are silicon NPN epitaxial planar accordance to WEEE 2002/96/EC phototransistors with daylight blocking filter in a miniature, Halogen-free according to IEC 61249-2-21 definition black dome lens package for surface mounting. Filter Find out more about Vishays Automotive Grade Product bandwidth is matched with 830 nm to 950 nm IR emitters. requirements at: www.vishay.com/applications APPLICATIONS Detector in automotive applications Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.5 VEMT2000X01 6 15 790 to 970 VEMT2020X01 6 15 790 to 970 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power power dissipation T 75 C P 100 mW amb V Document Number: 81595 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.1, 23-Jul-09 1 VEMT2000X01, VEMT2020X01 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Note T = 25 C, unless otherwise specified amb 120 100 80 60 R = 250 K/W thJA 40 20 0 0 10 203040 506070 80 90 100 21619 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 V C CEO Collector dark current V = 5 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 36 9 mA ca V = 5 V CE Angle of half sensitivity 15 deg Wavelength of peak sensitivity 860 nm p Range of spectral bandwidth 790 to 970 nm 0.5 Collector emitter saturation voltage I = 0.05 mA V 0.4 V C CEsat Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81595 2 Rev. 1.1, 23-Jul-09 P - Power Dissipation (mW) V

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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