VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: GW, RGW VEMT2520X01 VEMT2500X01 Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 15 16758-10 Package matched with IR emitter series VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Compliant to RoHS directive 2002/95/EC and in VEMT2500X01 series are silicon NPN epitaxial planar accordance to WEEE 2002/96/EC phototransistors in a miniature dome lens, clear epoxy Halogen-free according to IEC 61249-2-21 definition package for surface mounting. The device is sensitive to Find out more about Vishays Automotive Grade Product visible and near infrared radiation. requirements at: www.vishay.com/applications APPLICATIONS Detector in automotive applications Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 VEMT2500X01 6 15 470 to 1090 VEMT2520X01 6 15 470 to 1090 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power power dissipation T 75 C P 100 mW amb V Document Number: 81134 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.0, 29-Apr-09 1 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Note T = 25 C, unless otherwise specified amb 120 100 80 60 R = 250 K/W thJA 40 20 0 0 10 203040 506070 80 90 100 21619 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 V C CEO Collector dark current V = 5 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 36 9 mA CA V = 5 V CE Angle of half sensitivity 15 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 470 to 1090 nm 0.1 Collector emitter saturation voltage I = 0.05 mA V 0.4 V C CEsat Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81134 2 Rev. 1.0, 29-Apr-09 P - Power Dissipation (mW) V