X-On Electronics has gained recognition as a prominent supplier of VEMT2520X01 Phototransistors across the USA, India, Europe, Australia, and various other global locations. VEMT2520X01 Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

VEMT2520X01 Vishay

VEMT2520X01 electronic component of Vishay
VEMT2520X01 Vishay
VEMT2520X01 Phototransistors
VEMT2520X01  Optoelectronics

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See Product Specifications
Part No. VEMT2520X01
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors Gullwing 470-1090nm +/-15 deg
Datasheet: VEMT2520X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.855 ea
Line Total: USD 0.86 
Availability - 3882
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 6000
Multiples : 6000
6000 : USD 0.2852

3488
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 163
Multiples : 1
163 : USD 0.3995
178 : USD 0.3642
179 : USD 0.3634
198 : USD 0.3289
250 : USD 0.3279
500 : USD 0.312
1000 : USD 0.3119
3000 : USD 0.2998

11
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6774
10 : USD 0.6631
30 : USD 0.5601
100 : USD 0.4967

3882
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.855
10 : USD 0.5575
100 : USD 0.3619
500 : USD 0.3135
1000 : USD 0.286
2500 : USD 0.2849
6000 : USD 0.2684
24000 : USD 0.2585
48000 : USD 0.2574

3488
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 179
Multiples : 1
179 : USD 0.3634
198 : USD 0.3289
250 : USD 0.3279
500 : USD 0.312
1000 : USD 0.3119
3000 : USD 0.2998

5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 6000
Multiples : 6000
6000 : USD 0.2852

   
Manufacturer
Product Category
RoHS - XON
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Product
Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Maximum Dark Current
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Type
Wavelength
Brand
Maximum Collector Current
Cnhts
Half Intensity Angle Degrees
Hts Code
Light Current
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the VEMT2520X01 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VEMT2520X01 and other electronic components in the Phototransistors category and beyond.

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VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: GW, RGW VEMT2520X01 VEMT2500X01 Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 15 16758-10 Package matched with IR emitter series VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Compliant to RoHS directive 2002/95/EC and in VEMT2500X01 series are silicon NPN epitaxial planar accordance to WEEE 2002/96/EC phototransistors in a miniature dome lens, clear epoxy Halogen-free according to IEC 61249-2-21 definition package for surface mounting. The device is sensitive to Find out more about Vishays Automotive Grade Product visible and near infrared radiation. requirements at: www.vishay.com/applications APPLICATIONS Detector in automotive applications Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 VEMT2500X01 6 15 470 to 1090 VEMT2520X01 6 15 470 to 1090 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power power dissipation T 75 C P 100 mW amb V Document Number: 81134 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.0, 29-Apr-09 1 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Note T = 25 C, unless otherwise specified amb 120 100 80 60 R = 250 K/W thJA 40 20 0 0 10 203040 506070 80 90 100 21619 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 V C CEO Collector dark current V = 5 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 36 9 mA CA V = 5 V CE Angle of half sensitivity 15 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 470 to 1090 nm 0.1 Collector emitter saturation voltage I = 0.05 mA V 0.4 V C CEsat Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81134 2 Rev. 1.0, 29-Apr-09 P - Power Dissipation (mW) V

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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