VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: PLCC-3 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 94 8554 Base terminal connected Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION VEMT4700 is a high speed silicon NPN epitaxial planar Lead (Pb)-free reflow soldering phototransistor in a miniature PLCC-3 package for surface Compliant to RoHS directive 2002/95/EC and in mounting on printed boards. The device is sensitive to accordance to WEEE 2002/96/EC visible and near infrared radiation. APPLICATIONS Photo interrupters Miniature switches Counters Encoders Position sensors Light sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 VEMT4700 0.5 60 450 to 1080 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT4700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-3 VEMT4700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-3 Note MOQ: minimum order quantity ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 Document Number: 81501 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.4, 14-Jul-10 1 VEMT4700 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T 0.1, t 10 s I 100 mA p p CM Power dissipation P 100 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 10 T 260 C sd Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R 400 K/W thJA 125 R = 400 K/W thJA 100 75 50 25 0 02100 3040 5060 7080 90 100 T - Ambient Temperature (C) 20376 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown I = 1 mA V 70 V C (BR)CEO voltage Collector emitter dark current V = 20 V, E = 0 I 1200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO 2 Collector light current E = 1 mW/cm , = 950 nm, V = 5 V I 0.25 0.5 mA e CE ca Angle of half sensitivity 60 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.15 0.3 V CEsat I = 0.1 mA C V = 5 V, I = 1 mA, = 950 nm, S C t /t 6s r f R = 1 k L Rise time, fall time V = 5 V, I = 1 mA, = 950 nm, S C t /t 2s r f R = 100 L Cut-off frequency V = 5 V, I = 2 mA, R = 100 f 180 kHz S C L c www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81501 2 Rev. 1.4, 14-Jul-10 P - Power Dissipation Limit (mW) V