VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times VEMT2003X01 VEMT2023X01 Angle of half sensitivity: = 35 Package matched with IR emitter series VSMB2943RGX01 and VSMB2943GX01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 VEMT2003X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, APPLICATIONS black dome lens package for surface mounting. Filter Detector in automotive applications bandwidth is matched with 830 nm to 950 nm IR emitters. Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.5 VEMT2003X01 2.7 35 790 to 970 VEMT2023X01 2.7 35 790 to 970 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.0, 08-Apr-13 Document Number: 84162 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power power dissipation T 75 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow profile fig. 8 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA 120 100 80 60 R = 250 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21619 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 V C CEO Collector dark current V = 5 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 1.3 2.7 4.1 mA ca V = 5 V CE Angle of half sensitivity 35 deg Wavelength of peak sensitivity 860 nm p Range of spectral bandwidth 790 to 970 nm 0.5 Collector emitter saturation voltage I = 0.05 mA V 0.4 V C CEsat 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of Ica Tk 1.1 %/K Ica V = 5 V CE Rev. 1.0, 08-Apr-13 Document Number: 84162 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V