VEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 94 8553 Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC VEMT3700 is a high speed silicon NPN epitaxial planar APPLICATIONS phototransistor in a miniature PLCC-2 package for surface Photo interrupters mounting on printed boards. The device is sensitive to visible Miniature switches and near infrared radiation. Counters Encoders Position sensors Ligth sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 VEMT3700 0.5 60 450 to 1080 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VEMT3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T 0.1, t 10 s I 100 mA p p CM Power dissipation P 100 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 10 T 260 C sd Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R 400 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81478 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.5, 05-Sep-08 521VEMT3700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 125 R = 400 K/W thJA 100 75 50 25 0 02100 3040 5060 70 80 90 100 20376 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector ligth current I 0.25 0.5 mA ca V = 5 V CE Angle of half sensitivity 60 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.15 0.3 V CEsat I = 0.1 mA C V = 5 V, I = 1 mA, = 950 nm, S C t /t 6s r f R = 1 k L Rise time, fall time V = 5 V, I = 1 mA, = 950 nm, S C t /t 2s r f R = 100 L Cut-off frequency V = 5 V, I = 2 mA, R = 100 f 180 kHz S C L c Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 4 10 2.0 1.8 3 10 V = 5 V CE 2 1.6 E = 1 mW/cm e = 950 nm V = 20 V CE 2 1.4 10 1.2 1 10 1.0 0.8 10 20 40 60 80 100 0.6 0 20 40 60 80 100 94 8304 T - Ambient Temperature (C) amb 94 8239 T - Ambient Temperature (C) amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81478 522 Rev. 1.5, 05-Sep-08 I - Collector Dark Current (nA) CEO P - Power Dissipation Limit (mW) V I - Relative Collector Current ca rel