VESD03A1C-HD1 www.vishay.com Vishay Semiconductors ESD Protection Diode in LLP1006-2L FEATURES Ultra compact LLP1006-2L package 2 1 Low package height < 0.4 mm 20856 1-line ESD-protection Low leakage current < 1 A Low load capacitance C = 46 pF D 20855 (V = 2.5 V f = 1 MHz) R ESD immunity acc. IEC 61000-4-2 MARKING (example only) 30 kV contact discharge 30 kV air discharge XY High surge current acc. IEC 61000-4-5 I > 9.5 A PP 21121 Soldering can be checked by standard vision inspection. Bar = cathode marking No X-ray necessary X = date code Pin plating NiPdAu (e4) no whisker growth Y = type code (see table below) PATENT(S): www.vishay.com/patents Material categorization: for definitions of compliance click logo to get started DESIGN SUPPORT TOOLS please see www.vishay.com/doc 99912 Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD03A1C-HD1 VESD03A1C-HD1-GS08 8000 8000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD03A1C-HD1 LLP1006-2L E 0.72 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD03A1C-HD1 RATING TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, t = 8/20 s/single shot I 9.5 A p PPM Peak pulse power Acc. IEC 61000-4-5, t = 8/20 s/single shot P 95 W P PP Contact discharge acc. IEC 61000-4-2 10 pulses 30 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -40 to +150 C STG PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 1.9, 03-Jan-2019 Document Number: 81797 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD03A1C-HD1 www.vishay.com Vishay Semiconductors BiAs-MODE (Bidirectional asymmetrical protection mode) With the VESD03A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD03A1C-HD1 clamping behaviour is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20925 ELECTRICAL CHARACTERISTICS VESD03A1C-HD1 BiAs Mode (between pin 1 and pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 3.3 V RWM Reverse voltage At I = 1 A V 3.3 - - V R R Reverse current At V = 3.3 V I -0.06 1 A R R Reverse breakdown voltage At I = 1 mA V 56 6.6 V R BR At I = 1 A V -6.4 7.5 V PP C Reverse clamping voltage At I = I = 9.5 A V -8.5 10 V PP PPM C At I = 0.2 A V -0.9 1.2 V PP F Forward clamping voltage At I = 1 A V -1.1 - V PP F At I = I = 9.5 A V -2.5 - V PP PPM F At V = 0 V f = 1 MHz C -78 90 pF R D Capacitance At V = 2.5 V f = 1 MHz C -46- pF R D Rev. 1.9, 03-Jan-2019 Document Number: 81797 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2