SATAULC6-2M6 STMicroelectronics

SATAULC6-2M6 Ultra low capacitance ESD protection Datasheet - production data Low leakage current for longer operation of battery powered devices Higher reliability offered by monolithic integration Designed for go-through layout Complies with these standards QFN (pin view) IEC 61000-4-2 level 4 SATAULC6-2M6 15 kV air discharge 8 kV contact discharge MIL STD883G-Method 3015-7 Applications SATA port up to 3 Gb/s Features DVI and HDMI ports up to 1.65 Gb/s 2-line ESD protection (at 15 kV air and contact IEEE 1394a and b (Firewire) ports up to discharge, exceeds IEC 61000-4-2) 1.6 Gb/s Protects V when applicable USB 2.0 ports up to 480 Mb/s (Hi-Speed), BUS backwards compatible with USB 1.1 low and Ultra low capacitance: 0.9 pF 825 MHz full speed Fast response time Ethernet port: 10/100/1000 Mb/s QFN package SIM card protection RoHS compliant Video line protection Benefits Portable electronics ESD protection of V when applicable BUS Description Optimized rise and fall times for maximum data integrity The SATAULC6-2M6 is a monolithic, application Large bandwidth to minimize impact on data specific discrete device dedicated to ESD signal quality protection of high speed interfaces. Consistent differential signal balance: Its very low line capacitance secures a high level Ultra low impact on intra- and inter-pair of signal integrity. The device topology provides skew this integrity without compromising the complete Matching high bit rate SATA, DVI, HDMI protection of ICs against the most stringent ESD and IEEE 1394 requirements strikes. 2 Low PCB space occupation - 1.45 mm for QFN October 2015 DocID15254 Rev 2 1/10 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics SATAULC6-2M6 1 Characteristics Figure 1. Functional diagram I/O1 1 6 NC I/O2 2 5 NC 3 4 V GND BUS QFN 6 leads Table 1. Absolute ratings Symbol Parameter Value Unit IEC 61000-4-2 air discharge 15 V Peak pulse voltage IEC 61000-4-2 contact discharge 15 kV PP MIL STD883G-Method 3015-7 25 T Storage temperature range -55 to +150 C stg T Maximum junction temperature 125 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Test conditions Unit Min. Typ. Max I Leakage current V = 5 V 0.5 A RM RM Breakdown voltage between V BUS V I = 1 mA 6 V BR R and GND I = 1 A, t = 8/20 s PP p 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 s PP p 19 V Any I/O pin to GND V = 0 V, F = 825 MHz R C Capacitance between I/O 0.45 pF i/o-i/o GND not connected V = 0 V, F = 825 MHz R C Capacitance between I/O and GND 0.9 pF i/o-GND Any I/0 pin to GND Capacitance variation between I/O C V = 0 V, F = 1 MHz 0.08 pF i/o-GND R and GND 2/10 DocID15254 Rev 2 Obsolete Product(s) - Obsolete Product(s)