X-On Electronics has gained recognition as a prominent supplier of SCT10N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT10N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT10N120 STMicroelectronics

SCT10N120 electronic component of STMicroelectronics
SCT10N120 STMicroelectronics
SCT10N120 SiC MOSFETs
SCT10N120  Semiconductors

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See Product Specifications
Part No. SCT10N120
Manufacturer: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm
Datasheet: SCT10N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.6314 ea
Line Total: USD 10.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 600
Multiples : 600
600 : USD 4.8

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 10.6314
5 : USD 9.6508
10 : USD 9.0561
50 : USD 8.1359
100 : USD 7.564
250 : USD 7.2743

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 30
Multiples : 30
30 : USD 8.5517
90 : USD 7.9183
150 : USD 7.9183
300 : USD 7.9183
600 : USD 7.9183

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 12.2327
10 : USD 10.614
25 : USD 10.1225
100 : USD 8.784
600 : USD 7.6546
1200 : USD 7.1736

   
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RoHS - XON
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Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Transistor Type
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We are delighted to provide the SCT10N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT10N120 and other electronic components in the SiC MOSFETs category and beyond.

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SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., T = 150 C) in an HiP247 package J Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS D(2, TAB) Motor drives High voltage DC-DC converters Switch mode power supplies G(1) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. S(3) The outstanding thermal properties of the SiC material, combined with the devices AM01475v1 noZen housing in the proprietary HiP247 package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247 Packing Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as halogen-free. DS10954 - Rev 3 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.SCT10N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 150 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.17 C/W thj-case R Thermal resistance junction-ambient max 40 C/W thj-amb DS10954 - Rev 3 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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