STE139N65M5 STMicroelectronics

STE139N65M5 N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code V T R max I DS jmax DS(on) D STE139N65M5 710 V 0.017 W 130 A Very low R DS(on) Higher V rating DSS Higher dv/dt capability Excellent switching performance ISOTOP 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known * PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Packages Packaging STE139N65M5 139N65M5 ISOTOP Tube August 2013 DocID025117 Rev 1 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STE139N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID025117 Rev 1