STE48NM50 STMicroelectronics

STE48NM50 N-CHANNEL 550V Tjmax - 0.08 - 48A ISOTOP MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V R I DSS DS(on) D ( Tjmax) STE48NM50 550V < 0.1 48 A TYPICAL R (on) = 0.08 DS HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE ISOTOP TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain pro- Figure 2: Internal Schematic Diagram cess with the Companys PowerMESH horizon- tal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar competi- tions products. APPLICATIONS The MDmesh family is very suitable for increas- ing power density of high voltage converters allow- ing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STE48NM50 E48NM50 ISOTOP TUBE Rev. 2 March 2005 1/9STE48NM50 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 48 A D C I Drain Current (continuous) at T = 100C 30 A D C I ( ) Drain Current (pulsed) 192 A DM P Total Dissipation at T = 25C 450 W TOT C Derating Factor 3.6 W/C dv/dt (*) Peak Diode Recovery voltage slope 15 V/ns V Insulation Winthstand Voltage (AC-RMS) 2500 V ISO T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j ( )Pulse width limited by safe operating area (*) I 48A, di/dt 400 A/s, V V , T T SD DD (BR)DSS j JMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 0.28 C/W Rthc-sink (**) Thermal Resistance Case-sink Typ 0.05 C/W (**) with conductive GREASE Applies Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 15 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 810 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD ELECTRICAL CHARACTERISTICS (T =25C UNLESS OTHERWISE SPECIFIED) CASE Table 6: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 500 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 10 A DSS DS Drain Current (V = 0) GS V = Max Rating, T = 125C 100 A DS C I Gate-body Leakage V = 30V 100 nA GSS GS Current (V = 0) DS V Gate Threshold Voltage V = V , I = 250A 34 5 V GS(th) DS GS D R Static Drain-source On V = 10V, I = 24A 0.08 0.1 DS(on) GS D Resistance 2/9