STD180N4F6 STMicroelectronics

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOT STD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STD180N4F6 180N4F6 DPAK Tape and reel July 2016 DocID028602 Rev 2 1/16 www.st.com This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD180N4F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................. 10 4.2 DPAK packing information .............................................................. 13 5 Revision history ............................................................................ 15 2/16 DocID028602 Rev 2