STD1NK80Z-1 STMicroelectronics

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D 2 STQ1NK80ZR-AP 800 V < 16 0.3 A 3 W STN1NK80Z 800 V < 16 0.25A 2.5 W 3 STD1NK80Z 800 V < 16 1.0 A 45 W 2 1 STD1NK80Z-1 800 V < 16 1.0 A 45 W TYPICAL R (on) = 13 SOT-223 DS TO-92 (Ammopack) EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 3 2 1 1 DESCRIPTION DPAK IPAK The SuperMESH series is obtained through an extreme optimization of STs well established Figure 2: Internal Schematic Diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STQ1NK80ZR-AP Q1NK80ZR TO-92 AMMOPAK STN1NK80Z N1NK80Z SOT-223 TAPE & REEL STD1NK80ZT4 D1NK80Z DPAK TAPE & REEL STD1NK80Z-1 D1NK80Z IPAK TUBE Rev. 3 January 2006 1/15STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit TO-92 SOT-223 DPAK/IPAK V Drain-source Voltage (V = 0) 800 V DS GS V Drain-gate Voltage (R = 20 k ) 800 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 0.3 0.25 1.0 A D C I Drain Current (continuous) at T = 100C 0.19 0.16 0.63 A D C I ( ) Drain Current (pulsed) 5 A DM P Total Dissipation at T = 25C 3 2.5 45 W TOT C Derating Factor 0.025 0.02 0.36 W /C V Gate source ESD (HBM-C= 100pF, R= 1.5K) 1000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature j -55 to 150 C Storage Temperature T stg ( ) Pulse width limited by safe operating area (1) I 1 A, di/dt 200 A/s, V 640 SD DD Table 4: Thermal Data TO-92 SOT-223 DPAK/IPAK Unit Rthj-case Thermal Resistance Junction-case Max -- -- 2.78 C/W Rthj-amb( ) Thermal Resistance Junction-ambient Max 120 50 100 C/W Rthj-lead Thermal Resistance Junction-lead Max 40 -- -- C/W T Maximum Lead Temperature For Soldering 260 -- 300 C l Purpose ( ) When mounted on 1inch F R-4 BOARD, 2 oz Cu Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 1 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 50 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open 30 V GSO Voltage Drain) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15