STD16N65M2 STMicroelectronics

STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. Internal schematic diagram Description , TAB This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STD16N65M2 16N65M2 DPAK Tape and reel October 2014 DocID027076 Rev 1 1/17 This is information on a product in full production. www.st.comContents STD16N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 16 2/17 DocID027076 Rev 1