X-On Electronics has gained recognition as a prominent supplier of STD16N65M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD16N65M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD16N65M2 STMicroelectronics

Name: STD16N65M2
Brand: STMicroelectronics
SKU: STD16N65M2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STD16N65M2 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STD16N65M2
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	STMicroelectronics MOSFET
Datasheet:	STD16N65M2 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 1.5048 ea
Line Total: USD 3762

Availability - 0

MOQ: 2500 Multiples: 2500
Pack Size: 2500

STD16N65M2 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 2500 Multiples : 2500	2500 : USD 1.0796

0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 2500 Multiples : 2500	2500 : USD 1.5048

0 Ship by Thu. 28 Nov to Mon. 02 Dec MOQ : 1 Multiples : 1	1 : USD 6.372 10 : USD 2.3004 25 : USD 2.1708 100 : USD 1.8468 500 : USD 1.5228 1000 : USD 1.2636 2500 : USD 1.2528

We are delighted to provide the STD16N65M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD16N65M2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. Internal schematic diagram Description , TAB This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STD16N65M2 16N65M2 DPAK Tape and reel October 2014 DocID027076 Rev 1 1/17 This is information on a product in full production. www.st.comContents STD16N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 16 2/17 DocID027076 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 11 A 11 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 320 mOhms 320 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Vgs th - Gate-Source Threshold Voltage 2 V 2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 110 W 110 W
Mounting Style smd/smt smd/smt
Package / Case DPAK - 3 DPAK - 3
Packaging Cut Tape Cut Tape
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 19.5 nC 19.5 nC
Channel Mode enhancement enhancement
Configuration single single
Brand Stmicroelectronics Stmicroelectronics
Ciss - Input Capacitance 718 pF 718 pF
Fall Time 11.3 ns 11.3 ns
Rise Time 8.2 ns 8.2 ns
Typical Turn-Off Delay Time 36 ns 36 ns
Series std16n65m2 std16n65m2
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type mosfet mosfet
Factory Pack Quantity : 2500 2500
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 11.3 ns 11.3 ns