STD25NF10LT4 Datasheet N-channel 100 V, 30 m typ., 25 A, STripFET II Power MOSFET in a DPAK package Features Type V R max. I DS DS(on) D TAB STD25NF10LT4 100 V 35 m 25 A 3 2 1 Exceptional dv/dt capability DPAK 100% avalanche tested Low gate charge D(2, TAB) Applications Switching applications G(1) Description This Power MOSFET series has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance S(3) and gate charge. This renders the device suitable for use as primary switch in AM01475v1 noZen advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD25NF10LT4 Product summary Order code STD25NF10LT4 Marking D25NF10L Package DPAK Packing Tape and reel DS3055 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD25NF10LT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage (R = 20 k) 100 V DGR GS V Gate-source voltage 16 V GS Drain current (continuous) at T = 25 C 25 A C I D Drain current (continuous) at T = 100 C 21 A C (1) I Drain current (pulsed) 100 A DM P Total dissipation at T = 25 C 100 W TOT C (2) E Single-pulse avalanche energy 450 mJ AS (3) dv/dt Peak diode recovery voltage slope 20 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. Starting T = 25 C, I = 12.5 A, V = 50 V J D DD 3. I 25 A, di/dt 300 A/s, V V , T T SD DS (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.5 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an FR-4 board of 1 inch, 2 oz Cu. DS3055 - Rev 3 page 2/18