STD1NK60-1 STMicroelectronics

STD1NK60-1 N-channel 600 V, 7.3 typ., 1 A SuperMESH Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STD1NK60-1 600 V 8.5 1 A 30 W Extremely high dv/dt capability 3 2 ESD improved capability 1 100% avalanche tested Gate charge minimized IPAK Applications Low power battery chargers Swith mode low power supplies (SMPS) Figure 1: Internal schematic diagram Low power, ballast, CFL (compact fluorescent lamps) D(2, TAB) Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an G(1) optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability S(3) for the most demanding applications. AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing STD1NK60-1 D1NK60 IPAK Tube February 2017 DocID030308 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STD1NK60-1 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 IPAK (TO-251) type A package information .................................... 10 4.2 IPAK (TO-251) type C package information .................................... 12 5 Revision history ............................................................................ 14 2/15 DocID030308 Rev 1